초록 ▼

In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made t

In an insulated gate type field effect semiconductor device having a thin silicon semiconductor film, the gate insulating film that covers the active layer is a thin film consisting essentially of silicon, oxygen and nitrogen. In the gate insulating film in the device, the nitrogen content is made the largest in the interface between the film and the adjacent gate electrode, and the material constituting the gate electrode is prevented from being diffused into the gate insulating film. In the film, the nitrogen content is made the largest in the interface between the film and the adjacent active layer, and hydrogen ions, etc. are prevented from being diffused from the active layer into the gate insulating film. Prior to the formation of the gate insulating film, the surface of the active layer is irradiated to laser rays or intense rays comparable to laser rays, so as to be oxidized or nitrided.

대표청구항 ▼

A method for producing a semiconductor device comprising the steps of: forming an active layer on a substrate having an insulating surface; irradiating a laser into the active layer in an atmosphere including at least one of oxygen, nitrogen and halogen element; and forming a film including silicon,

A method for producing a semiconductor device comprising the steps of: forming an active layer on a substrate having an insulating surface; irradiating a laser into the active layer in an atmosphere including at least one of oxygen, nitrogen and halogen element; and forming a film including silicon, oxygen and nitrogen on the active layer by plasma CVD, wherein the substrate is not substantially exposed to an air atmosphere from the laser irradiating step to the film forming step; and wherein composition ratios of nitrogen at an interface between the film and the active layer and at a surface of the film not in contact with the active layer are larger than in other portions of the film.