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Semiconductor device having a lead including aluminum 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/94
  • H01L-027/01
  • H01L-027/12
출원번호 US-0483049 (1995-06-07)
우선권정보 JP-0351916 (1992-12-09); JP-0023289 (1993-01-18)
발명자 / 주소
  • Miyazaki Minoru (Kanagawa JPX) Murakami Akane (Kanagawa JPX) Cui Baochun (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 159  인용 특허 : 0

초록 ▼

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semic

대표청구항 ▼

A semiconductor device comprising: a substrate; a thin film transistor formed over said substrate; a lead electrically connected to one of source or drain regions of said thin film transistor, wherein said lead comprises a first conductive layer in direct contact with said one of source or drain reg

이 특허를 인용한 특허 (159)

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