초록 ▼

A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the

A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ordinary crystallization temperature of an amorphous silicon film; and then crystallizing the rest of the portions by irradiating thereto laser beam or an intense light having an intensity equivalent thereto. A process similar to the one above, wherein, the catalytic element is incorporated directly into the amorphous silicon film instead of bringing a substance containing the same into contact with the amorphous silicon film.

대표청구항 ▼

A method of manufacturing a semiconductor device comprising the steps of: forming an amorphous silicon film on a substrate having a first region and a second region; selectively disposing a material containing a metal or metal silicide thereof, wherein said metal is selected from the group consistin

A method of manufacturing a semiconductor device comprising the steps of: forming an amorphous silicon film on a substrate having a first region and a second region; selectively disposing a material containing a metal or metal silicide thereof, wherein said metal is selected from the group consisting of nickel, iron, cobalt and platinum, in contact with a portion of said amorphous silicon film located on said first region of the substrate; applying a first energy generated by a first source to said substrate to crystallize only a first portion of said amorphous silicon film located on said first region of the substrate and provided with said material; applying a second energy generated by a second source, said second source being different from said first source, to only a second portion of the amorphous silicon film located on said second region of the substrate to crystallize said second portion to a different degree of crystallization than said first portion; and forming at least one electronic device utilizing said portion of said silicon film located on said first region of the substrate and at least one electronic device utilizing said silicon film located on said second region of the substrate.