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The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide laye

The properties of a diffusion barrier material layer over a semiconductor substrate are enhanced in a simple and time-effective manner by immersing the substrate in an oxidizing liquid. For a titanium-tungsten barrier metal, a dip in nitric acid for 1-60 minutes provides the metal with an oxide layer of the right thickness of 10-20 Å.

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A method of fabricating a semiconductor device in a portion of a semiconductor substrate, the method comprising the step of forming an oxide layer on top of a barrier material layer of titanium-tungsten prior to depositing a further material layer over the oxide layer, wherein the oxide layer is for

A method of fabricating a semiconductor device in a portion of a semiconductor substrate, the method comprising the step of forming an oxide layer on top of a barrier material layer of titanium-tungsten prior to depositing a further material layer over the oxide layer, wherein the oxide layer is formed by oxidizing a surface of the barrier material layer with a liquid oxidizing agent at a temperature between room temperature and 100°C. for a time sufficient to produce an oxide layer of titanium and tungsten oxides having a thickness on the order of 10-20 angstroms. In a method of fabricating a semiconductor device in a portion of a semiconductor substrate, wherein the method includes the step of forming a barrier layer prior to depositing a further material layer over the barrier layer, the barrier layer comprising a material layer of titanium-tungsten and an oxide layer on the material layer of titanium-tungsten, the improvement comprising forming the oxide layer by oxidizing a surface of the titanium-tungsten material layer by immersion thereof into an oxidizing liquid for a time sufficient thereby to produce on the material layer of titanium-tungsten an oxide layer of titanium and tungsten oxides having a thickness on the order of 10-20 angstroms.