초록 ▼

A semiconductor light emitting device of an edge emitting type in the present invention has an active layer surface parallel to a reference plane and has a light emitting surface formed by etching until below the active layer surface in a direction perpendicular to the reference plane. An upper surf

A semiconductor light emitting device of an edge emitting type in the present invention has an active layer surface parallel to a reference plane and has a light emitting surface formed by etching until below the active layer surface in a direction perpendicular to the reference plane. An upper surface of a substrate in front of the light emitting surface is inclined in a direction separated from the active layer surface as this upper surface advances forward from the light emitting surface. An angle formed between the reference plane and the upper surface of the substrate in front of the light emitting surface is greater than a half beam angle at half-power points of a far-field emission pattern in a vertical direction. In this construction, no light component within the full beam angle at half-power points of the far-field emission pattern as a large part of light emitted from the light emitting surface is reflected on the upper surface of the substrate in front of the light emitting surface. Accordingly, the influences of light interference can be reduced and an inclination of emitted light with respect to an optical fiber can be reduced so that a reduction in optical coupling efficiency can be restrained.

대표청구항 ▼

A semiconductor light emitting device of an edge emitting type having an active layer surface parallel to a reference plane and having a light emitting surface formed by etching until below the active layer surface in a direction perpendicular to the reference plane; the semiconductor light emitting

A semiconductor light emitting device of an edge emitting type having an active layer surface parallel to a reference plane and having a light emitting surface formed by etching until below the active layer surface in a direction perpendicular to the reference plane; the semiconductor light emitting device being constructed such that an upper surface of a substrate in front of the light emitting surface is inclined in a direction separated from the active layer surface as this upper surface advances forward from the light emitting surface; and an angle formed between the reference plane and the upper surface of the substrate in front of the light emitting surface is greater than a half beam angle at half-power points of a far-field emission pattern in a vertical direction.