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특허 상세정보

Power semiconductor device with low on-state voltage

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-029/74    H01L-029/00    H01L-027/082   
미국특허분류(USC) 257/572 ; 257/139 ; 257/566 ; 257/577
출원번호 US-0308292 (1994-09-19)
우선권정보 JP-0231252 (1993-09-17)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 23  인용 특허 : 6
초록

A circuit connecting a sub-IGBT element S2 having a smaller current capacity and a smaller saturated current than the main IGBT element S1 and a resistance R1 in series is connected to the main IGBT element S1 in parallel, a MOSFET element S3 being connected between the gate electrode of the sub-IGBT element S2 and the emitter electrode of the main IGBT element S1, a delay element being connected between the gate electrode of the sub-IGBT element S2 and the gate electrode of the main IGBT element S1. In normal operation, the ON-state voltage is small and...

대표
청구항

A semiconductor device comprising: a first main terminal; a second main terminal having a voltage different from the voltage of the first main terminal; a control terminal; a first voltage control semiconductor element for conducting the flow of a main current therethrough, one of the main electrodes of the first control semiconductor element being connected to the first main terminal, the other main electrode being connected to the second main terminal; a second voltage control semiconductor element having both of a current capacity and a saturated curr...

이 특허를 인용한 특허 피인용횟수: 23

  1. Yasuhiko Kohno JP; Mutsuhiro Mori JP; Junpei Uruno JP. Circuit incorporated IGBT and power conversion device using the same. USP2002096448587.
  2. Feiler, Wolfgang. High voltage semiconductor component. USP2004096794689.
  3. Yasuda, Yukio. IGBT with a Schottky barrier diode. USP2005076921958.
  4. Yukio Yasuda JP. IGBT, control circuit, and protection circuit on same substrate. USP2002086441463.
  5. Umberger Dean M.. Low operating power, high voltage ringing switch circuit. USP2001126333664.
  6. Balakrishnan, Balu. Method and apparatus for extending the size of a transistor beyond one integrated circuit. USP2005046882212.
  7. Balakrishnan,Balu. Method and apparatus for extending the size of a transistor beyond one integrated circuit. USP2006057038524.
  8. Balakrishnan,Balu. Method and apparatus for extending the size of a transistor beyond one integrated circuit. USP2008047352232.
  9. Godo, Shinsuke; Yasuda, Yukio; Kawamoto, Atsunobu. Power semiconductor device for igniter. USP2013128605408.
  10. Ryu, Takashi; Akashi, Hiroki; Ishii, Takuya; Saito, Hiroshi. Power supply. USP2009097592792.
  11. Garner, David Michael; van der Duijn Schouten, Niek. Power supply driver circuit. USP2010057710098.
  12. Lalithambika, Vinod A.; van der Dui{grave over (j)}n Schouten, Niek; Schiff, A. Johannes. Saturation detection circuits. USP2010067733098.
  13. Rainer Constapel DE; Heinrich Sciilangenotto DE; Shuming Xu SG. Self-protect thyristor. USP2002076423987.
  14. de Rochemont, L. Pierre. Semiconductor carrier with vertical power FET module. USP2014068749054.
  15. de Rochemont, L. Pierre. Semiconductor carrier with vertical power FET module. USP2017089735148.
  16. Sugiyama, Koichi; Inoue, Tomoki. Semiconductor device and capacitance regulation circuit. USP2009127639061.
  17. Sugiyama,Koichi; Inoue,Tomoki. Semiconductor device and capacitance regulation circuit. USP2006117141832.
  18. Yasuda Yukio,JPX. Semiconductor device and semiconductor circuit using the same. USP2001046218709.
  19. Sekigawa, Kiyoshi. Semiconductor device including a sense element and a main element, and current detector circuit using the semiconductor device. USP2017089720029.
  20. Kusunoki, Shigeru; Mochizuki, Koichi; Kawakami, Minoru. Semiconductor device with a resistance element in a trench. USP2016119484444.
  21. Moyse,Philip John; Coulson,David Robert; Jacques,Russell; Garner,David M.. Switch mode power supply control systems. USP2009037504815.
  22. Hasegawa Hiroyuki,JPX ; Kurosu Toshiki,JPX ; Sugayama Shigeru,JPX. Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same. USP2001096288597.
  23. Francis, Richard; Ng, Chiu. Trench IGBT. USP2004016683331.