초록 ▼

A circuit connecting a sub-IGBT element S2 having a smaller current capacity and a smaller saturated current than the main IGBT element S1 and a resistance R1 in series is connected to the main IGBT element S1 in parallel, a MOSFET element S3 being connected between the gate electrode of the sub-IGB

A circuit connecting a sub-IGBT element S2 having a smaller current capacity and a smaller saturated current than the main IGBT element S1 and a resistance R1 in series is connected to the main IGBT element S1 in parallel, a MOSFET element S3 being connected between the gate electrode of the sub-IGBT element S2 and the emitter electrode of the main IGBT element S1, a delay element being connected between the gate electrode of the sub-IGBT element S2 and the gate electrode of the main IGBT element S1. In normal operation, the ON-state voltage is small and low loss can be realized. In the event of a short-circuit accident, the sub-IGBT element S2 detects the short-circuit before the main IGBT element S1 turns on to prevent an over-current from flowing in the main IGBT element S1, which substantially improves the short-circuit resistivity of the semiconductor device.

대표청구항 ▼

A semiconductor device comprising: a first main terminal; a second main terminal having a voltage different from the voltage of the first main terminal; a control terminal; a first voltage control semiconductor element for conducting the flow of a main current therethrough, one of the main electrode

A semiconductor device comprising: a first main terminal; a second main terminal having a voltage different from the voltage of the first main terminal; a control terminal; a first voltage control semiconductor element for conducting the flow of a main current therethrough, one of the main electrodes of the first control semiconductor element being connected to the first main terminal, the other main electrode being connected to the second main terminal; a second voltage control semiconductor element having both of a current capacity and a saturated current per unit area smaller than those of the first voltage control semiconductor element, one of the main electrodes of the second control semiconductor element being connected to the first main terminal, the other main electrode being connected to the second main terminal through a resistance, the control electrode being connected to the control terminal, wherein the second voltage control semiconductor element permits the flow of a fraction of the main current therethrough and operates to detect a possible overcurrent flowing through the first voltage control semiconductor element; means for decreasing a control voltage applied to the control electrodes of the first and the second voltage control semiconductor elements when the voltage developed across the resistance caused by the current flowing through the second voltage control semiconductor element exceeds a given value; and a delay element connected between the control electrode of the first voltage control semiconductor element and the control electrode of the second voltage control semiconductor element, wherein the delay element delays the turning-on of the first voltage control semiconductor element to be after the turning-on of the second voltage control semiconductor element when an ON-signal is applied to the control terminal.