|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||H01L-029/74 H01L-029/00 H01L-027/082|
|미국특허분류(USC)||257/572 ; 257/139 ; 257/566 ; 257/577|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 23 인용 특허 : 6|
A circuit connecting a sub-IGBT element S2 having a smaller current capacity and a smaller saturated current than the main IGBT element S1 and a resistance R1 in series is connected to the main IGBT element S1 in parallel, a MOSFET element S3 being connected between the gate electrode of the sub-IGBT element S2 and the emitter electrode of the main IGBT element S1, a delay element being connected between the gate electrode of the sub-IGBT element S2 and the gate electrode of the main IGBT element S1. In normal operation, the ON-state voltage is small and...
A semiconductor device comprising: a first main terminal; a second main terminal having a voltage different from the voltage of the first main terminal; a control terminal; a first voltage control semiconductor element for conducting the flow of a main current therethrough, one of the main electrodes of the first control semiconductor element being connected to the first main terminal, the other main electrode being connected to the second main terminal; a second voltage control semiconductor element having both of a current capacity and a saturated curr...