|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||361/103 ; 361/58|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 14 인용 특허 : 3|
In a semiconductor device including a power MOSFET (M0) for the output stage, a temperature detection circuit produces an output signal upon detecting an abnormal rise in the chip temperature, the signal turns on a set input element (M1) in a latch circuit so that the latch circuit becomes a set state, the set output of the latch circuit turns on a control element (M5), causing the power MOSFET to become non-conductive so that it is protected from destruction. The latch circuit is not brought to a reset state even if the external gate terminal of the dev...
A semiconductor device comprising: a power MOSFET; an operation state detection circuit which carries out a detecting operation of an electrical signal related to an operation state of said power MOSFET; a latch circuit which latches an output signal from the operation state detection circuit so as to protect said power MOSFET from damage in response to said detecting operation of said operation state detection circuit; a control element which causes a conductive path to be created between a gate electrode and a source electrode of said power MOSFET in r...