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Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

대표청구항 ▼

A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor fi

A method for fabricating a semiconductor device comprising the steps of: forming a semiconductor film comprising silicon on a substrate; disposing a catalytic material in contact with said semiconductor film, said catalytic material being capable of promoting crystallization of said semiconductor film; heating said semiconductor film provided with said catalytic material in order to crystallize said semiconductor film; and annealing the semiconductor film in an atmosphere including a chlorine containing gas after said heating in order to remove at least a portion of said catalytic material contained in said semiconductor film wherein said catalytic material comprises a metal selected from the group consisting of nickel, iron, cobalt, platinum and palladium.