[특허]Insulated gate semiconductor device and driving circuit device and electronic system both using the same

Insulated gate semiconductor device and driving circuit device and electronic system both using the same 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H02H-003/00
출원번호	US-0288729 (1994-08-15)
우선권정보	JP-0204364 (1993-08-18)
발명자 / 주소	Sakamoto Kozo (Hachiouji JPX) Yoshida Isao (Hinode-machi JPX) Otaka Shigeo (Takasaki JPX) Iijima Tetsuo (Maebashi JPX) Shono Harutora (Gunma-machi JPX) Uchid Ken (Higashiyamato JPX) Kobayashi Masayos
출원인 / 주소	Hitachi, Ltd. (Tokyo JPX 03) Hitachi ULSI Engineering Corp. (Tokyo JPX 03)
인용정보	피인용 횟수 : 45 인용 특허 : 0

초록 ▼

An improvement in conditions that protective functions of an insulated gate semiconductor device with a protection circuit incorporated therein are performed, an improvement in the cutoff of heating, the prevention of malfunctions and an improvement in ease of usage can be achieved. The insulated gate semiconductor device of the present invention comprises a power insulated gate semiconductor element (M9), at least one MOSFET (M1 through M7) for a protection circuit, for controlling the power insulated gate semiconductor element, a constant-voltage circuit using forward voltages developed across diodes (D2a through D2f) for the constant-voltage circuit, and voltage restricting diodes (D1 and D0a through D0d) for controlling the upper limit of a power supply voltage of the constant-voltage circuit. Power to be supplied to the voltage restricting diodes is supplied from an external gate terminal of the power insulated gate semiconductor element. The present invention can bring about an advantageous effect that an improvement in reliability of the insulated gate semiconductor device and an improvement in the ease of use can be achieved.

대표청구항 ▼

A semiconductor device comprising: a first terminal; a second terminal; a third terminal; a first insulated gate transistor having a first current path coupled between said second terminal and said third terminal, and a gate coupled to said first terminal; a second insulated gate transistor having a second current path coupled between said second terminal and said third terminal and a gate coupled to said first terminal, for monitoring a drain current supplied to the first current path of the first insulated gate transistor; a first diode having an anode coupled to said first terminal, and a cathode, for preventing a current flowing from the second terminal to the first terminal when an overvoltage appears at the first terminal; a switch circuit having a third current path coupled between said cathode of said first diode and said third terminal, and a control terminal coupled to one end of said second current path of said second insulated gate transistor, wherein the switch circuit is turned on to limit the drain current of the first insulated gate transistor based on the monitored drain current of the first insulated gate transistor; and a protection circuit for preventing a breakdown of the first diode when the overvoltage appears at the first terminal, said protection circuit being coupled between said first terminal and said third terminal.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Insulated gate semiconductor device and driving circuit device and electronic system both using the same 원문보기

초록 ▼

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연합인증

Insulated gate semiconductor device and driving circuit device and electronic system both using the same 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

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이 특허를 인용한 특허 (45)

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