|국가/구분||United States(US) Patent 등록|
|미국특허분류(USC)||361/93 ; 361/18 ; 361/91 ; 361/103|
|발명자 / 주소|
|출원인 / 주소|
|인용정보||피인용 횟수 : 45 인용 특허 : 0|
An improvement in conditions that protective functions of an insulated gate semiconductor device with a protection circuit incorporated therein are performed, an improvement in the cutoff of heating, the prevention of malfunctions and an improvement in ease of usage can be achieved. The insulated gate semiconductor device of the present invention comprises a power insulated gate semiconductor element (M9), at least one MOSFET (M1 through M7) for a protection circuit, for controlling the power insulated gate semiconductor element, a constant-voltage circu...
A semiconductor device comprising: a first terminal; a second terminal; a third terminal; a first insulated gate transistor having a first current path coupled between said second terminal and said third terminal, and a gate coupled to said first terminal; a second insulated gate transistor having a second current path coupled between said second terminal and said third terminal and a gate coupled to said first terminal, for monitoring a drain current supplied to the first current path of the first insulated gate transistor; a first diode having an anode...