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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0329644 (1994-10-25) |
우선권정보 | JP-0294633 (1993-10-29); JP-0303436 (1993-11-09); JP-0307206 (1993-11-12); JP-0162705 (1994-06-20) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 1302 인용 특허 : 0 |
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.
A method for manufacturing a semiconductor device comprising the steps of: disposing a crystallization promoting solution in contact with at least a portion of an amorphous silicon film on a substrate, said solution containing an element selected from the group consisting nickel (Ni), palladium (Pd)
A method for manufacturing a semiconductor device comprising the steps of: disposing a crystallization promoting solution in contact with at least a portion of an amorphous silicon film on a substrate, said solution containing an element selected from the group consisting nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), indium (In), tin (Sn), phosphorous (P), arsenic (As), and antinomy (Sb); and crystallizing said silicon film by heating; wherein a concentration of said element in said silicon film after said crystallizing is within a range from 1×1016 to 1×1019 atoms/cm3 and said solution contains said element at a concentration less than 200 ppm.
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