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Transistor device employing crystallization catalyst

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/04
  • H01L-027/01
출원번호 US-0477941 (1995-06-07)
우선권정보 JP-0078997 (1993-03-12); JP-0078998 (1993-03-12)
발명자 / 주소
  • Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Atsugi JPX 03)
인용정보 피인용 횟수 : 233  인용 특허 : 0

초록

A thin film transistor includes a crystallized amorphous silicon film having a gate insulating film and a gate electrode formed thereon. The device includes impurities implanted in a self-aligned manner and a catalyst that accelerates the crystallization of the silicon film. The catalyst is introduc

대표청구항

A semiconductor device comprising: a semiconductor layer having a crystallinity formed on a substrate; a pair of impurity regions of P or N type conductivity formed in said semiconductor layer and impurity being contained in said pairs of impurity regions, wherein said semiconductor layer contains a

이 특허를 인용한 특허 (233)

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  154. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  155. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  156. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
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  161. Shunpei Yamazaki JP; Yasuhiko Takemura JP; Hongyong Zhang JP, Semiconductor device and method of fabricating the same.
  162. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  163. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  164. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
  165. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  166. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
  167. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  168. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
  169. Shunpei Yamazaki JP; Hisashi Ohtani JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor device and method of manufacturing the same.
  170. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  172. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device and method of manufacturing the same.
  173. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  174. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  175. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
  176. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
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  178. Zhang, Hongyong; Ohnuma, Hideto; Takemura, Yasuhiko, Semiconductor device and process for fabricating the same.
  179. Zhang,Hongyong; Ohnuma,Hideto; Takemura,Yasuhiko, Semiconductor device and process for fabricating the same.
  180. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  181. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  182. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  183. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  184. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  185. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
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  187. Yamazaki, Shunpei; Yamazaki, Yu; Koyama, Jun; Ikeda, Takayuki; Shibata, Hiroshi; Kitakado, Hidehito; Fukunaga, Takeshi, Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor.
  188. Yamazaki, Shunpei; Yamazaki, Yu; Koyama, Jun; Ikeda, Takayuki; Shibata, Hiroshi; Kitakado, Hidehito; Fukunaga, Takeshi, Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor.
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  190. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  191. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device having crystalline semiconductor layer.
  192. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  193. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  194. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  195. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki, Semiconductor device with residual nickel from crystallization of semiconductor film.
  196. Atsushi Yoshinouchi JP; Yasuaki Murata JP, Semiconductor device, thin film transistor and method for producing the same, and liquid crystal display apparatus and method for producing the same.
  197. Yoshinouchi Atsushi,JPX ; Murata Yasuaki,JPX, Semiconductor device, thin film transistor having an active crystal layer formed by a line containing a catalyst element.
  198. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Semiconductor display devices.
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  203. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  204. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  205. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
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  218. Fukuda, Kaichi, Thin film transistor and manufacturing process therefor.
  219. Yasuhiko Takemura JP; Hongyong Zhang JP; Satoshi Teramoto JP, Thin film transistor having enhanced field mobility.
  220. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  221. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin film transistor using a semiconductor film.
  222. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  223. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  224. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  225. Yamazaki,Shunpei; Arai,Yasuyuki, Thin-film photoelectric conversion device and a method of manufacturing the same.
  226. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  227. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  228. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  229. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Transistor and process for fabricating the same.
  230. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Transistor and process for fabricating the same.
  231. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
  232. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  233. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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