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Apparatus for producing an inductive plasma for plasma processes 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05H-001/00
출원번호 US-0467352 (1995-06-06)
발명자 / 주소
  • Keller John Howard (Newburgh NY) Barnes Michael Scott (San Francisco CA) Forster John Curt (San Francisco CA) Heidenreich
  • III John Edward (Yorktown Heights NY)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 45  인용 특허 : 2

초록

An efficient RF coil for inductively coupled plasmas provides either capacitive or inductive coupling to the plasma. The coil has a layered structure including at least one RF coil, an insulator having a low dielectric constant and a second RF magnetic structure. The second RF magnetic structure may

대표청구항

An apparatus for producing an inductive plasma used for plasma processing of a workpiece, comprising: a vacuum chamber including means within said chamber to receive a workpiece to be processed by a plasma; an RF induction coil structure formed of at least first and second layers separated by an ins

이 특허에 인용된 특허 (2)

  1. Sugai Hideo (Aichi-ken JPX) Ichihara Katsutaro (Kanagawa-ken JPX) Yasuda Nobuaki (Kanagawa-ken JPX) Okubo Michiko (Kanagawa-ken JPX), Plasma discharge generating antenna.
  2. Ishizuka Shuichi (Nirasaki JPX) Kawamura Kohei (Yamanashi-ken JPX) Hata Jiro (Yamanashi-ken JPX) Suzuki Akira (Nirasaki JPX), Plasma film forming method and apparatus and plasma processing apparatus.

이 특허를 인용한 특허 (45)

  1. Carr,Jeffrey W., Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces.
  2. Benjamin, Neil; Kuthi, Andras, Apparatus and method for controlling the voltage applied to an electrostatic shield used in a plasma generator.
  3. Jozef Brcka, Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma.
  4. Carr, Jeffrey W., Apparatus and method for reactive atom plasma processing for material deposition.
  5. Carr,Jeffrey W., Apparatus and method for reactive atom plasma processing for material deposition.
  6. Shu Nakajima JP, Apparatus and methods for actively controlling RF peak-to-peak voltage in an inductively coupled plasma etching system.
  7. Benjamin, Neil; Kuthi, Andras, Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator.
  8. Blalock, Guy T.; Donohoe, Kevin G., Apparatus for improved low pressure inductively coupled high density plasma reactor.
  9. Blalock, Guy T.; Donohoe, Kevin G., Apparatus for improved low pressure inductively coupled high density plasma reactor.
  10. Hong Liubo ; Wang Hougong ; Yao Gongda ; Xu Zheng, Central coil design for ionized metal plasma deposition.
  11. Brcka,Jozef, Compact, distributed inductive element for large scale inductively-coupled plasma sources.
  12. Khater Marwan H. ; Overzet Lawrence J. ; Cherrington Blake E., High density plasma source for semiconductor processing.
  13. Liubo Hong, Hybrid coil design for ionized deposition.
  14. Nakajima, Shu, Inductively coupled plasma etching apparatus.
  15. Blama, Michael J.; Freeman, J. Steve, Inductor-capacitor resonant circuits and improved methods of using same.
  16. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Integrated PVD system for aluminum hole filling using ionized metal adhesion layer.
  17. Miller, Keith A.; Xu, Genhua; Zhong, Shengde; Lokhande, Mahendra Bhagwat, Interior antenna for substrate processing chamber.
  18. Kanakasabapathy, Sivananda K.; Overzet, Lawrence J., Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges.
  19. Wicker Thomas E. ; Lamm Albert J. ; Vahedi Vahid, Method and apparatus for preventing lightup of gas distribution holes.
  20. Tanaka Yoichiro ; Hong Liubo ; Wada Yuichi,JPX, Method and apparatus for producing a uniform density plasma above a substrate.
  21. Holmann Ralf ; Xu Zheng, Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma.
  22. Okumura Tomohiro,JPX ; Nakayama Ichiro,JPX ; Watanabe Shozo,JPX ; Haraguchi Hideo,JPX, Method and device for plasma treatment.
  23. Carr, Jeffrey W., Method for atmospheric pressure reactive atom plasma processing for surface modification.
  24. Miller, Paul A.; Aragon, Ben P., Method for generating surface plasma.
  25. Guy T. Blalock ; Kevin G. Donohoe, Method for improved low pressure inductively coupled high density plasma reactor.
  26. Carr,Jeffrey W., Method for non-contact cleaning of a surface.
  27. Fischer, Andreas; Benjamin, Neil Martin Paul, Methods and apparatus for igniting and sustaining plasma.
  28. Hopwood Jeffrey A., Monolithic miniaturized inductively coupled plasma source.
  29. Ngan Kenny King-tai, Pasting layer formation method for high density plasma deposition chambers.
  30. Baldwin ; Jr. Scott K. ; Barnes Michael S. ; Holland John P., Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma.
  31. Hideyuki Kazumi JP; Tsutomu Tetsuka JP; Ryoji Nishio JP; Masatsugu Arai JP; Ken Yoshioka JP; Tsunehiko Tsubone JP; Akira Doi JP; Manabu Edamura JP; Kenji Maeda JP; Saburo Kanai JP, Plasma processing apparatus and method.
  32. Kazumi Hideyuki,JPX ; Tetsuka Tsutomu,JPX ; Nishio Ryoji,JPX ; Arai Masatsugu,JPX ; Yoshioka Ken,JPX ; Tsubone Tsunehiko,JPX ; Doi Akira,JPX ; Edamura Manabu,JPX ; Maeda Kenji,JPX ; Kanai Saburo,JPX, Plasma processing apparatus and method.
  33. Kazumi, Hideyuki; Tetsuka, Tsutomu; Nishio, Ryoji; Arai, Masatsugu; Yoshioka, Ken; Tsubone, Tsunehiko; Doi, Akira; Edamura, Manabu; Maeda, Kenji; Kanai, Saburo, Plasma processing apparatus and method.
  34. Kazumi, Hideyuki; Tetsuka, Tsutomu; Nishio, Ryoji; Arai, Masatsugu; Yoshioka, Ken; Tsubone, Tsunehiko; Doi, Akira; Edamura, Manabu; Maeda, Kenji; Kanai, Saburo, Plasma processing apparatus and method.
  35. Nishio, Ryoji; Yoshioka, Ken; Kanai, Saburou; Kanekiyo, Tadamitsu; Kihara, Hideki; Okuda, Koji, Plasma processing apparatus and method.
  36. Nakano Akira,JPX ; Kim Sung Chul,KRX ; Fukuda Koichi,JPX ; Takeda Yasuhiro,JPX ; Kasama Yasuhiko,JPX ; Ohmi Tadahiro,JPX ; Ono Shoichi,JPX, Plasma processing apparatus, matching box, and feeder.
  37. Okumura Tomohiro,JPX ; Haraguchi Hideo,JPX ; Nakayama Ichiro,JPX ; Yanagi Yoshihiro,JPX, Plasma processing method and apparatus.
  38. Brcka, Jozef; Robison, Rodney Lee, Plasma processing system with locally-efficient inductive plasma coupling.
  39. Hideyuki Kazumi JP; Tsutomu Tetsuka JP; Ryoji Nishio JP; Masatsugu Arai JP; Ken Yoshioka JP; Tsunehiko Tsubone JP; Akira Doi JP; Manabu Edamura JP; Kenji Maeda JP; Saburo Kanai JP, Plasma processsing apparatus.
  40. Brcka Jozef, Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma.
  41. Jozef Brcka, Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element.
  42. Valentin N. Todorov ; Robert E. Ryan ; Arthur Sato ; Jin-Yuan Chen ; Xueyu Qian ; Zhiwen Sun, Process chamber having a voltage distribution electrode.
  43. Gopalraja Praburam ; Xu Zheng ; Hofmann Ralf, Sputtering method and apparatus with small diameter RF coil.
  44. Marwan H. Khater ; Lawrence J. Overzet, Transmission line based inductively coupled plasma source with stable impedance.
  45. Davis, Matthew F.; Hooshdaran, Frank, Variable efficiency faraday shield.
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