초록 ▼

Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that

Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that are amorphous, smooth and featureless having a band gap of 5.8 eV, a refractive index of 2.0, a breakdown electric field breakdown of 108 V/m, a low-frequency dielectric constant of 6.0-6.9, high-frequency dielectric constant of 3.9-4.0, well suited for many thin film applications.

대표청구항 ▼

A method for deposition of a thin film of aluminum nitride on the surface of a substrate disposed in a chamber, said method comprising the steps of heating said substrate in said chamber to a temperature between 300 K and 373 K, providing an alkylamine alane precursor gas into said chamber as a sour

A method for deposition of a thin film of aluminum nitride on the surface of a substrate disposed in a chamber, said method comprising the steps of heating said substrate in said chamber to a temperature between 300 K and 373 K, providing an alkylamine alane precursor gas into said chamber as a source of aluminum for said thin film, and providing a nitrogen hydride precursor gas into said chamber as a source of nitrogen for said thin film, said alkylamine alane precursor gas and said hydride precursor gas mix together proximal to said substrate, and dissociating said alkylamine alane precursor gas and said nitrogen hydride precursor gas in said chamber proximal to said surface of said substrate by a photon source of a wavelength less than 220 nm providing photon dissociation energy to said alkylamine alane precursor gas and said nitrogen hydride precursor gas to form said thin film on said surface.