이 특허를 인용한 특허 (29)

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2. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Aluminum hole filling method using ionized metal adhesion layer.

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3. Lee,Wei Ti; Guo,Ted; Yu,Sang Ho, Aluminum sputtering while biasing wafer.

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4. Xu Zheng ; Forster John ; Yao Tse-Yong, Apparatus for filling apertures in a film layer on a semiconductor substrate.

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5. Xu Zheng ; Forster John ; Yao Tse-Yong ; Nulman Jaim ; Chen Fusen, Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer.

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6. Restaino Darryl ; Yang Chi-Hua ; Poetzlberger Hans W.,DEX ; Katata Tomio,JPX ; Aochi Hideaki, High throughput A1-Cu thin film sputtering process on small contact via for manufacturable beol wiring.

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7. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Integrated PVD system for aluminum hole filling using ionized metal adhesion layer.

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8. Ding, Peijun; Xu, Zheng; Zhang, Hong; Tang, Xianmin; Gopalraja, Praburam; Rengarajan, Suraj; Forster, John C.; Fu, Jianming; Chiang, Tony; Yao, Gongda; Chen, Fusen E.; Chin, Barry L.; Kohara, Gene Y., Metal / metal nitride barrier layer for semiconductor device applications.

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9. Naik Mehul B. ; Guo Ted ; Chen Liang-Yuh ; Mosely Roderick Craig ; Beinglass Israel, Metallization process and method.

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10. Sidhwa, Ardeshir J., Method and structure of a thick metal layer using multiple deposition chambers.

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11. Lau, Gorley L., Method for forming a metallization structure in an integrated circuit.

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12. Gorley L. Lau, Method for forming void-free metallization in an integrated circuit.

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13. Xu Zheng ; Forster John ; Yao Tse-Yong, Method for low thermal budget metal filling and planarization of contacts vias and trenches.

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14. Chiang,Tony; Yao,Gongda; Ding,Peijun; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y.; Xu,Zheng; Zhang,Hong, Method of depositing a metal seed layer on semiconductor substrates.

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15. Chiang,Tony; Yao,Gongda; Ding,Peijun; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y.; Xu,Zheng; Zhang,Hong, Method of depositing a metal seed layer on semiconductor substrates.

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16. Ding,Peijun; Xu,Zheng; Zhang,Hong; Tang,Xianmin; Gopalraja,Praburam; Rengarajan,Suraj; Forster,John C.; Fu,Jianming; Chiang,Tony; Yao,Gongda; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y., Method of depositing a tantalum nitride/tantalum diffusion barrier layer system.

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17. Park Sang-Hoon,KRX, Method of forming a metal interconnection line for semiconductor device.

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18. Sandhu Gurtej S. ; Iyer Ravi, Method of forming aluminum film.

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19. Lee, Ming-Han; Kuo, Tz-Jun; Ho, Chien-Hsin; Lee, Hsiang-Huan, Method of forming an interconnection.

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20. Sandhu Gurtej S. ; Iyer Ravi, Method of making a void-free aluminum film.

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21. Sandhu, Gurtej S.; Iyer, Ravi, Method of making a void-free aluminum film.

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22. Sandhu, Gurtej S.; Iyer, Ravi, Method of making a void-free aluminum film.

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23. Kuno Toyohiko,JPX ; Kitamura Kenichi,JPX ; Tanaka Ken,JPX, Method of manufacturing multiple aluminum layer in a semiconductor device.

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24. Konecni Anthony J. ; Russell Noel, PVD deposition process for CVD aluminum liner processing.

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25. Hatano, Masaaki; Usui, Takamasa, Semiconductor device.

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26. Xu Zheng ; Forster John ; Yao Tse-Yong, Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches.

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27. Laptev, Pavel N.; Felmetsger, Valery, Stress adjustment in reactive sputtering.

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28. Laptev, Pavel N; Felmetsger, Valery, Stress adjustment in reactive sputtering.

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29. Jick Yu ; Ruth Brain, Two chamber metal reflow process.

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