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Light emitting diode structure 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01S-003/19
출원번호 US-0652328 (1996-05-22)
발명자 / 주소
  • Huang Kuo-Hsin (10-1Fl.
  • No. 36
  • Sec. 1
  • Kwang Fu Road Hsinchu City TWX) Chen Tzer-Perng (3Fl.
  • No. 55
  • Alley 10
  • Lane 81
  • Kwang Hua Street 2 Hsinchu City TWX)
인용정보 피인용 횟수 : 96  인용 특허 : 0

초록

A light emitting diode comprises a multiple quantum well structure. The light emitting diode has a first conductivity type GaAs substrate, an AlGaInP lower cladding layer of the first conductivity type, a multiple quantum well structure, an AlGaInP upper cladding layer of a second conductivity type,

대표청구항

A light emitting diode comprising: a semiconductor substrate GaAs of a first conductivity type, said substrate having a top side and a bottom side; a first electrode formed on said bottom side of said substrate; a lower cladding AlGaInP layer of said first conductivity type being grown on said top s

이 특허를 인용한 특허 (96)

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