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Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-011/06
출원번호 US-0650087 (1996-05-16)
발명자 / 주소
  • Sandhu Gurtej Singh (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 224  인용 특허 : 4

초록

A method and apparatus for detecting the endpoint of CMP processing on semiconductor wafer in which a lower layer of material with a first reflectivity is positioned under an upper layer of material with a second reflectivity. Initially an endpoint site is selected on the wafer in a critical area wh

대표청구항

A method for detecting an endpoint in chemical-mechanical polishing of a semiconductor wafer having a lower layer of material with a first reflectivity and an upper layer with a second reflectivity positioned over the lower layer, wherein the upper layer is polished with a chemical-mechanical polish

이 특허에 인용된 특허 (4)

  1. Lustig Naftali E. (Croton-on-Hudson NY) Saenger Katherine L. (Ossining NY) Tong Ho-Ming (Yorktown Heights NY), In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing.
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  4. Koos Daniel A. (Boise ID) Meikle Scott (Boise ID), Optical end point detection methods in semiconductor planarizing polishing processes.

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