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Photodetectors using III-V nitrides 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
  • H01L-021/26
출원번호 US-0499710 (1995-07-07)
발명자 / 주소
  • Moustakas Theodore D. (Dover MA) Misra Mira (Arlington MA)
출원인 / 주소
  • Trustees of Boston University (Boston MA 02)
인용정보 피인용 횟수 : 45  인용 특허 : 22

초록 ▼

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III

대표청구항 ▼

A detector comprising at least one single crystal III-V nitride film deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, wherein the (mtmt

이 특허에 인용된 특허 (22)

  1. Ohba Yasuo (Yokohama JPX) Izumiya Toshihide (Tokyo JPX) Hatano Ako (Tokyo JPX), AlGaN compound semiconductor material.
    상세보기
  2. Nakamura Shuji (Anan JPX), Crystal growth method for gallium nitride-based compound semiconductor.
    상세보기
  3. Manabe Katsuhide (Ichinomiya JPX) Okazaki Nobuo (Konan JPX) Akasaki Isamu (Machida JPX) Hiramatsu Kazumasa (Yokkaichi JPX) Amano Hiroshi (Hamamatsu JPX), Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same.
    상세보기
  4. Carter ; Jr. Calvin H. (Raleigh NC), High efficiency light emitting diodes from bipolar gallium nitride.
    상세보기
  5. Edmond John A. (Apex NC) Carter ; Jr. Calvin H. (Cary NC), High sensitivity ultraviolet radiation detector.
    상세보기
  6. Moustakas Theodore D. (Dover MA), Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films.
    상세보기
  7. Melas Andreas A. (Burlington MA) Braunagel Norbert (Karlsruhe DEX), Method for vapor phase deposition of gallium nitride film.
    상세보기
  8. Glass Robert C. (Linkoping NC SEX) Palmour John W. (Cary NC) Davis Robert F. (Raleigh NC) Porter Lisa S. (Raleigh NC), Method of forming platinum ohmic contact to p-type silicon carbide.
    상세보기
  9. Nakamura Shuji (Anan JPX) Iwasa Naruhito (Anan JPX) Senoh Masayuki (Anan JPX), Method of manufacturing P-type compound semiconductor.
    상세보기
  10. Kozawa Takahiro (Owariasahi JPX), Method of manufacturing gallium nitride semiconductor light-emitting device.
    상세보기
  11. Okamoto Akihiko (Tokyo JPX) Ohata Keiichi (Tokyo JPX), Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor.
    상세보기
  12. Khan Muhammad A. (White Bear Lake MN) Kuznia Jonathon N. (Bloomington MN) Van Hove James M. (Eagan MN), Narrow band algan filter.
    상세보기
  13. Shuskus Alexander J. (West Hartford CT), Passivation of III-V semiconductor surfaces by plasma nitridation.
    상세보기
  14. Glass Robert C. (Linkoping NC SEX) Palmour John W. (Cary NC) Davis Robert F. (Raleigh NC) Porter Lisa S. (Raleigh NC), Platinum ohmic contact to p-type silicon carbide.
    상세보기
  15. Gordon Roy G. (Cambridge MA) Hoffman David (Spring TX) Riaz Umar (Cambridge MA), Process for chemical vapor deposition of main group metal nitrides.
    상세보기
  16. Akasaki Isamu (Nagoya JPX) Sawaki Nobuhiko (Nagoya JPX), Process for growing III-V compound semiconductors on sapphire using a buffer layer.
    상세보기
  17. Tokunaga Hiroyuki (Kawasaki JPX) Yamagata Kenji (Atsugi JPX) Yonehara Takao (Atsugi JPX), Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same.
    상세보기
  18. Manabe Katsuhide (Ichinomiya JPX) Okazaki Nobuo (Konan JPX) Akazaki Isamu (Machida JPX) Hiramatsu Kazumasa (Yokkaichi JPX) Amano Hiroshi (Hamamatsu JPX), Process of vapor growth of gallium nitride and its apparatus.
    상세보기
  19. Ota Hiroyuki (Iruma JPX) Watanabe Atsushi (Iruma JPX), Semiconductor light emitting device.
    상세보기
  20. Manabe Katsuhide (Ichinomiya JPX) Kato Hisaki (Komaki JPX) Akasaki Isamu (Machida JPX) Hiramatsu Kazumasa (Yokkaichi JPX) Amano Hiroshi (Hamamatsu JPX), Substrate for growing gallium nitride compound-semiconductor device and light emitting diode.
    상세보기
  21. Khan M. Asif (Burnsville MN) Schulze Richard G. (Hopkins MN) Skogman Richard A. (Plymouth MN), Tunable cut-off UV detector based on the aluminum gallium nitride material system.
    상세보기
  22. Jacob Guy M. (Creteil FRX) Hallais Jean P. (Ablon FRX), Vapor deposition of single crystal gallium nitride.
    상세보기

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  1. Auner, Gregory W.; Zhong, Feng; Hughes, Chantelle; Shreve, Gina; Ying, Hao, Acoustic wave sensor apparatus, method and system using wide bandgap materials.
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  2. Wei X. Yang ; Thomas E. Nohava ; Scott A. McPherson ; Robert C. Torreano ; Subash Krishnankutty ; Holly A. Marsh, Back-illuminated heterojunction photodiode.
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  3. Liao, Yitao; Collins, Douglas A., Backside transparent substrate roughening for UV light emitting diode.
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  4. Liao, Yitao; Collins, Douglas A., Backside transparent substrate roughening for UV light emitting diode.
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  5. Cole, Barrett E.; Marta, Terry, Beam intensity detection in a cavity ring down sensor.
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  6. Cole, Barrett E., CRDS mirror for normal incidence fiber optic coupling.
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  7. Cole, Barrett E., Cavity enhanced photo acoustic gas sensor.
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  8. Cole, Barrett E., Cavity ring-down spectrometer having mirror isolation.
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  9. Cox, James Allen; Cole, Barrett E., Compact gas sensor using high reflectance terahertz mirror and related system and method.
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  10. Schlesser, Raoul; Collazo, Ramón R.; Sitar, Zlatko, Controlled polarity group III-nitride films and methods of preparing such films.
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  11. Schlesser, Raoul; Collazo, Ramón R.; Sitar, Zlatko, Controlled polarity group III-nitride films and methods of preparing such films.
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  12. Reid, Terence Alan; Karinka, Shridhara Alva; Nagale, Milind P.; Wang, Yi; Sanghera, Gurdial, Electrochemical cell.
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  13. Reid,Terence Alan; Karinka,Shridhara Alva; Nagale,Milind P.; Wang,Yi; Sanghera,Gurdial, Electrochemical cell.
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  14. Fritz, Bernard, Enhanced cavity for a photoacoustic gas sensor.
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  15. Maurice P. Bianchi, Gallium nitride collector grid solar cell.
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  16. Nishikawa Takashi,JPX ; Sasai Yoichi,JPX ; Kitabatake Makoto,JPX, Growth of GaN on Si substrate using GaSe buffer layer.
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  17. Yang Wei ; Nohava Thomas E. ; McPherson Scott A. ; Torreano Robert C. ; Marsh Holly A. ; Krishnankutty Subash, High gain GaN/AlGaN heterojunction phototransistor.
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  18. Cox, James Allen; Higashi, Robert, High reflectance terahertz mirror and related method.
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  19. Ruden P. Paul ; Krishnankutty Subash, Hybrid ultraviolet detector.
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  20. Khare, Reena; Goetz, Werner K.; Camras, Michael D., Increasing the brightness of III-nitride light emitting devices.
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  21. Higashi, Robert E.; Newstrom-Peitso, Karen M.; Ridley, Jeffrey A., Integral topside vacuum package.
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  22. Farhad Abbasi Ghelmansarai, Interdigital photodetector for indirect x-ray detection in a radiography imaging system.
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  23. Hak Dong Cho ; Sang Kyu Kang, Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis.
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  24. Hak Dong Cho ; Sang Kyu Kang, Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis.
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  25. Heffernan Jonathan,GBX ; Takahashi Koji,JPX ; Kawanishi Hidenori,JPX, Method of growing group III or group III-V nitride layer.
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  26. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.
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  27. Cole,Barrett E.; Higashi,Robert E.; Zins,Christopher J.; Krishnankutty,Subash, Multi-substrate package assembly.
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  28. Cole, Barrett E.; Marta, Terry; Cox, James Allen; Nusseibeh, Fouad, Multiple wavelength cavity ring down gas sensor.
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  29. Cole,Barrett E., Multiple wavelength spectrometer.
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  30. Takahira, Yoshiyuki, Nitride semiconductor light emitting device.
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  31. Cole, Barrett E.; Cox, James A.; Zook, J. David, Optical cavity system having an orthogonal input.
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  32. Cole, Barrett E.; Gu, Yuandong, Particle detection using fluorescence.
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  33. Collazo, Ramon R.; Sitar, Zlatko; Dalmau, Rafael, Passivation of aluminum nitride substrates.
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  34. Collazo, Ramon R.; Sitar, Zlatko; Dalmau, Rafael, Passivation of aluminum nitride substrates.
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  35. Goldenberg Barany Barbara ; McPherson Scott A. ; Reimer Scott T. ; Ulmer Robert P. ; Zook J. David ; Hitchell ; deceased Maurice L., Process for forming a high gain, wide bandgap gallium nitride photoconductor having particular sensitivity to ultraviol.
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  36. Sato, Kenji, Radiation detecting apparatus.
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  37. Thalhammer, Stefan; Hofstetter, Markus; Howgate, John; Stutzmann, Martin, Radiation detector and measurement device for detecting X-ray radiation.
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  38. Auner, Gregory W.; Naik, Ratna; Ng, Simon; Abrams, Gary W.; McCallister, James Patrick; Iezzi, Raymond, Self-assembled nanobump array stuctures and a method to fabricate such structures.
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  39. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.
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  40. Cole,Barrett E.; Higashi,Robert E.; Subramanian,Arunkumar; Krishnankutty,Subash, Spectrally tunable detector.
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  41. Cox,James A.; Cole,Barrett E., Tunable laser fluid sensor.
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  42. Lin,Cha Hsin; Lee,Lurng Shehng, Ultraviolet detector.
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  43. Surya,Charles; Fong,Patrick Wai Keung, Ultraviolet detector.
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  44. Auner,Gregory W.; Safadi,Mona R., Wide bandgap semiconductor waveguide structures.
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  45. Thalhammer, Stefan; Hofstetter, Markus; Howgate, John; Stutzmann, Martin, X-ray camera for the high-resolution detection of X-rays.
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