초록 ▼

The inventive method cleans residual titanium accumulations and other undesirable materials from a planarized surface of a wafer to produce a planarized surface with less than about fifty defects per wafer. After a metallic layer of material has been planarized using a CMP process, loose residual pa

The inventive method cleans residual titanium accumulations and other undesirable materials from a planarized surface of a wafer to produce a planarized surface with less than about fifty defects per wafer. After a metallic layer of material has been planarized using a CMP process, loose residual particles of undesirable material are removed from the planarized surface. The residual titanium accumulations remaining on the planarized surface are then detached from the planarized surface, which produces additional, new particles on the surface of the wafer. The additional particles produced by the detaching step are then scrubbed from the planarized surface until the planarized surface has less than approximately 50 defects per wafer.

대표청구항 ▼

In chemical-mechanical planarization of semiconductor wafers with abrasive slurry particles, a method of cleaning a wafer after a conductive layer and titanium film under the conductive layer have been planarized to a dielectric layer under the titanium film to form conductive features electrically

In chemical-mechanical planarization of semiconductor wafers with abrasive slurry particles, a method of cleaning a wafer after a conductive layer and titanium film under the conductive layer have been planarized to a dielectric layer under the titanium film to form conductive features electrically isolated from one to another by the dielectric layer, the method comprising the steps of: removing loose residual particles remaining on the dielectric layer and conductive features from a planarized surface across the dielectric layer and conductive features; detaching residual titanium accumulations remaining on the dielectric layer and conductive features from the planarized surface in a manner that leaves at least a portion of the dielectric layer between the conductive features to electrically isolate the conductive features from one another after the titanium accumulations are detached, the detaching step liberating particles on the planarized surface which were embedded into the planarized surface during chemical-mechanical planarization; and scrubbing the particles from the planarized surface after the detaching step.