초록 ▼

An n-on-p integrated heterostructure device of Group III-V nitride compound semiconductor materials is formed on a substrate of p-type monocrystalline silicon carbide and includes a buffer layer of p-type aluminum nitride or p-type aluminum gallium nitride on the substrate. The n-on-p integrated het

An n-on-p integrated heterostructure device of Group III-V nitride compound semiconductor materials is formed on a substrate of p-type monocrystalline silicon carbide and includes a buffer layer of p-type aluminum nitride or p-type aluminum gallium nitride on the substrate. The n-on-p integrated heterostructure includes continuously graded layers of aluminum gallium nitride to reduce or eliminate conduction band or valence band offsets. A multiple quantum well may also be used instead of the continuously graded layer. The n-on-p integrated heterostructure device may include lasers, LEDs and other devices. A p-type negative electron affinity (NEA) photoelectron emitter device may also be provided, including a p-type monocrystalline silicon carbide substrate, a layer of p-type aluminum nitride or aluminum gallium nitride, a continuously graded layer of aluminum gallium nitride and a layer of p-type aluminum gallium nitride. A surface enhancement layer may be located on the layer of aluminum gallium nitride. A multiple quantum well may be used instead of the continuously graded layer of aluminum gallium nitride. An ultraviolet-sensitive NEA device may thereby be provided.

대표청구항 ▼

A multicomponent platform for forming thereon an n-on-p semiconductor device of Group III-V nitride compound semiconductor materials, said multicomponent platform comprising: a conductive substrate comprising p-type monocrystalline silicon carbide; and a conductive buffer layer comprising p-type mon

A multicomponent platform for forming thereon an n-on-p semiconductor device of Group III-V nitride compound semiconductor materials, said multicomponent platform comprising: a conductive substrate comprising p-type monocrystalline silicon carbide; and a conductive buffer layer comprising p-type monocrystalline aluminum nitride or an alloy thereof on said substrate, such that an n-on-p semiconductor device of Group III-V nitride compound semiconductor materials may be formed on said buffer layer, opposite said substrate, and conduction from said n-on-p semiconductor device of Group III-V nitride compound semiconductor materials takes place through said conductive buffer layer and said conductive substrate.