초록 ▼

An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at

An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path. The apparatus may also have a thermal insulating member, in which a side of the stepped surface sidewall opposite to the furnace heat path is bordered by the thermal insulating member.

대표청구항 ▼

An apparatus for growing single-polytype, single crystals of silicon carbide, wherein the crystal growth occurs by a physical vapor transport, said apparatus comprising: (a) a furnace having a carbon crucible with walls that border and define a cavity therein; (b) a silicon carbide source material p

An apparatus for growing single-polytype, single crystals of silicon carbide, wherein the crystal growth occurs by a physical vapor transport, said apparatus comprising: (a) a furnace having a carbon crucible with walls that border and define a cavity therein; (b) a silicon carbide source material provided at a first location of the crucible cavity; (c) a monocrystalline silicon carbide seed provided at a second location of the cavity; and (d) a radiation heat leak heat path provided in the furnace proximate the second location of the crucible cavity.