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A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas

A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

대표청구항 ▼

A processing method using a focused energy beam for locally etching a workpiece, comprising the steps of: introducing mixed reactant gases comprising a reactive etching gas and a CVD gas into a processing chamber containing said workpiece; irradiating said focused ion energy beam onto a local portio

A processing method using a focused energy beam for locally etching a workpiece, comprising the steps of: introducing mixed reactant gases comprising a reactive etching gas and a CVD gas into a processing chamber containing said workpiece; irradiating said focused ion energy beam onto a local portion of said workpiece; and, forming an etching hole by etch-reacting said reactive etching gas on said workpiece at said local portion with said irradiated focused energy beam while depositing a film on a sidewall of said etching hole by decomposing said CVD gas with said irradiated focused ion beam, wherein the rate of said depositing is larger than the rate of said etch-reacting.