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Pyrodetector element having a pyroelectric layer produced by oriented growth, and method for the fabrication of the elem 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01J-005/34
  • H01L-037/02
출원번호 US-0581590 (1996-01-17)
우선권정보 DE-4323821 (1993-07-15)
국제출원번호 PCT/DE94/00785 (1994-07-08)
§371/§102 date 19960116 (19960116)
국제공개번호 WO-9502904 (1995-01-26)
발명자 / 주소
  • Wersing Wolfram (Kirchheim DEX) Bruchhaus Rainer (Munchen DEX)
출원인 / 주소
  • Siemens Aktiengesellschaft (Munich DEX 03)
인용정보 피인용 횟수 : 33  인용 특허 : 3

초록

A novel pyrodetector element is produced by oriented growth, with the aid of buffer layers, above a monocrystalline silicon substrate and thus enables the fabrication of an array of pyrodetectors having read-out and amplifier circuitry integrated on the common substrate. Proposed as the buffer layer

대표청구항

A pyrodetector element of thin-film construction, comprising: a) a monocrystalline silicon substrate, b) an epitaxial layer which is applied above the silicon substrate, c) a first electrode layer, d) a c-axis-oriented pyroelectric layer of a perovskite, and e) a second electrode layer, wherein said

이 특허에 인용된 특허 (3)

  1. Ramesh Ramamoorthy (Tinton Falls NJ), Cubic metal oxide thin film epitaxially grown on silicon.
  2. Hung Liang-Sun (Webster NY), Multilayer structure having an epitaxial metal electrode.
  3. Chiang Alice M. (Framingham MA) Denley Brian W. (Melrose MA) Schapker Richard L. (North Andover MA), Pyroelectric detector fabrication.

이 특허를 인용한 특허 (33)

  1. Passlack, Matthias; Hartin, Olin L.; Ray, Marcus; Medendorp, Nicholas, Enhancement mode metal-oxide-semiconductor field effect transistor.
  2. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
  3. Kamisawa Akira,JPX ; Fujimura Norifumi,JPX, Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same.
  4. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
  5. Iwasaki,Tomio; Moriya,Hiroshi; Miura,Hideo; Ikeda,Shuji, Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring.
  6. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
  7. Hashimoto, Kazuhiko; Mukaigawa, Tomonori; Kubo, Ryuichi; Kishihara, Hiroyuki; Noda, Minoru; Okuyama, Masanori, Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same.
  8. Kabasawa, Hidetoshi; Wakabayashi, Minoru, Infrared sensing element and infrared imaging device.
  9. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
  10. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
  11. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
  12. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
  13. Li, Xiao-min; Tanaka, Katsuhiko, Method for making ferroelectric thin-film, sensor and the ferroelectric thin-film element.
  14. Hu, Xiaoming; Craigo, James B.; Droopad, Ravindranath; Edwards, Jr., John L.; Liang, Yong; Wei, Yi; Yu, Zhiyi, Method of removing silicon oxide from a surface of a substrate.
  15. Iwasaki,Tomio; Moriya,Hiroshi; Miura,Hideo; Ikeda,Shuji, Miniaturized semiconductor device with improved dielectric properties.
  16. Iwasaki, Tomio; Moriya, Hiroshi; Miura, Hideo; Ikeda, Shuji, Semiconductor device.
  17. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
  18. Iwasaki, Tomio; Moriya, Hiroshi; Miura, Hideo; Ikeda, Shuji, Semiconductor device with high permittivity gate dielectric film.
  19. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
  20. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
  21. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
  22. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
  23. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
  24. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
  25. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
  26. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
  27. Chen, Tianniu; Xu, Chongying; Roeder, Jeffrey F.; Baum, Thomas H., Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta0thin films.
  28. Chen, Tianniu; Xu, Chongying; Roeder, Jeffrey F.; Baum, Thomas H., Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films.
  29. Hanson Charles M. ; Beratan Howard R., Thermal detector with inter-digitated thin film electrodes and method.
  30. Beratan Howard R. ; Hanson Charles M., Thermal detector with nucleation element and method.
  31. Beratan Howard R., Thermal detector with preferentially-ordered thermally sensitive element and method.
  32. Beratan Howard R. ; Hanson Charles M., Thermal detector with stress-aligned thermally sensitive element and method.
  33. Owen Robert A. ; Hanson Charles M. ; Frank Steven N. ; Beratan Howard R. ; Summerfelt Scott R., Thermal isolation of monolithic thermal detector.
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