초록 ▼

A semiconductor device suitable for active-matrix addressed liquid crystal display device equipped with pixel electrodes and comprising a thin film transistor and a capacitor formed on the same insulation substrate, provided that said capacitor is formed from an oxide insulation film provided on the

A semiconductor device suitable for active-matrix addressed liquid crystal display device equipped with pixel electrodes and comprising a thin film transistor and a capacitor formed on the same insulation substrate, provided that said capacitor is formed from an oxide insulation film provided on the lower electrode and a silicon nitride film. Highly reliable thin film transistors and capacitors can be obtained.

대표청구항 ▼

A process for fabricating a semiconductor device comprising: forming a member comprising a gate electrode and wiring of a transistor and one of a pair of electrodes of a capacitor from a material selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten; forming an oxid

A process for fabricating a semiconductor device comprising: forming a member comprising a gate electrode and wiring of a transistor and one of a pair of electrodes of a capacitor from a material selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten; forming an oxide layer on a surface of the member; cutting the member; forming a silicon nitride film covering the member and the oxide layer; and forming a pixel electrode on the silicon nitride film to form a capacitor comprising the member, the pixel electrode, the oxide layer and the silicon nitride film, wherein the silicon nitride film forming step is carried out after the cutting step.