초록 ▼

c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730°C., a substrate surface temperature of 790°C. and a laser fluence of 1 to 2 Joules/cm

c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730°C., a substrate surface temperature of 790°C. and a laser fluence of 1 to 2 Joules/cm2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.

대표청구항 ▼

A composite comprising a layer of a c-axis oriented copper oxide superconductor grown on a garnet substrate, wherein said substrate is chemically compatible with said copper oxide superconductor and has an orientation selected from the group consisting of (211)(422), (220)(440) and (420)(210), furth

A composite comprising a layer of a c-axis oriented copper oxide superconductor grown on a garnet substrate, wherein said substrate is chemically compatible with said copper oxide superconductor and has an orientation selected from the group consisting of (211)(422), (220)(440) and (420)(210), further wherein said substrate\s thermal expansion coefficient substantially matches the copper oxide superconductor\s thermal expansion coefficient, and further wherein the substrate has a mismatch of less than 4 percent with the a and b lattice parameters of the copper oxide superconductor, and wherein the substrate has a low defect density and is mechanically strong, the garnet substrate is selected from the group consisting of RE3M2N3O12 where RE is Gd, Lu, or Y and where M is Sc or In, and N is Ga or Al; Ca3MNGe3O12 where M is Ti, Zr, or Ge and where N is Mg or Ca; Na2CaZr2Ge3O12; Ca3MNGa3O12 where M is Nb, N is Zr, Hf or Sn; Ca3Sn3Ga2O12; NaCa2Sb2Ga3O12; Ca2LaZr2Ga3O12; (Ca2.5M0.5)M2Ga3O12 where M is Zr or Hf; Y3-xCaxTixGa5-xO12 where O≤x≤3; (Y3-x-yCax+y) ZryTixGa5-x-yO12 where O≤x+y+≤3; Y3(Y0.505Ga1.495) Ga3O12; Y3(In0.6Ga1.4) Ga3O12; and (Y1.05Ca1.95) Ti1.95Ga3.05O12.