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특허 상세정보

Use of cobalt tungsten phosphide as a barrier material for copper metallization

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B05D-005/12    B05D-001/18   
미국특허분류(USC) 427/96 ; 427/98 ; 427/437 ; 427/4431
출원번호 US-0754600 (1996-11-20)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 499  인용 특허 : 0
초록

A technique for electrolessly depositing a CoWP barrier material on to copper and electrolessly depositing copper onto a CoWP barrier material to prevent copper diffusion when forming layers and/or structures on a semiconductor wafer.

대표
청구항

A method of electrolessly depositing copper onto a barrier layer which separates said copper from another layer disposed on an opposite side of said barrier layer from said copper, comprising the steps of: depositing cobalt-tungsten-phosphide, CoWP, electrolessly on an exposed surface of said another layer to form said barrier layer; depositing said copper electrolessly.

이 특허를 인용한 특허 피인용횟수: 499

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