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Method for fabricating a semiconductor device using a catalyst introduction region 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
출원번호 US-0357648 (1994-12-16)
우선권정보 JP-0319904 (1993-12-20); JP-0063230 (1994-03-31); JP-0090356 (1994-04-27); JP-0139151 (1994-06-21)
발명자 / 주소
  • Makita Naoki (Nara JPX) Funai Takashi (Tenri JPX) Yamamoto Yoshitaka (Yamatokoriyama JPX) Mitani Yasuhiro (Habikino JPX) Nomura Katsumi (Tenri JPX) Miyamoto Tadayoshi (Tenri JPX) Kosai Takamasa (Tenr
출원인 / 주소
  • Sharp Kabushiki Kaisha (Osaka JPX 03)
인용정보 피인용 횟수 : 150  인용 특허 : 0

초록

Into an amorphous silicon film, catalyst elements for accelerating the crystallization are introduced. After patterning the amorphous silicon films in which the catalyst elements have been introduced into an island pattern, a heat treatment for the crystallization is conducted. Thus, the introduced

대표청구항

A method for fabricating a semiconductor device, comprising the steps of: (a) forming an amorphous silicon film on a substrate having an insulating surface in such a manner that the amorphous silicon film is patterned so as to form at least one island region and a catalyst element is selectively int

이 특허를 인용한 특허 (150)

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