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Thin film transistors for the peripheral circuit portion and the pixel portion 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
  • H01L-031/036
  • H01L-029/12
출원번호 US-0745312 (1996-11-12)
우선권정보 JP-0218156 (1993-08-10)
발명자 / 주소
  • Funada Fumiaki (Nara JPX) Morita Tatsuo (Kyoutohu JPX) Tanaka Hirohisa (Nara JPX) Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03) Sharp Corporation (Osaka JPX 03)
인용정보 피인용 횟수 : 203  인용 특허 : 0

초록 ▼

In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having

대표청구항 ▼

A semiconductor device comprising: a substrate: at least a first thin film transistor and a second thin film transistor provided on said substrate, each of said thin film transistors comprising a crystalline silicon layer in which crystals grew in a direction to form crystal grain boundaries paralle

이 특허를 인용한 특허 (203)

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