초록 ▼

A photoelectric cell of the present invention comprises a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region so as to form a pn junction together with the first semiconductor region; a first c

A photoelectric cell of the present invention comprises a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region so as to form a pn junction together with the first semiconductor region; a first conductive region formed in the surface of the first semiconductor region so as to be separated from the second semiconductor region and to form a first rectifier junction together with the first semiconductor region; a second conductive region formed in the surface of the first semiconductor region so as to be separated from the first conductive region and to be electrically connected to the second semiconductor region to form a second rectifier junction together with the first semiconductor region; a third conductive region formed in the surface of the second semiconductor region so as to form a third rectifier junction together with the second semiconductor region; a first insulated gate formed on a first channel forming region in the surface of the first semiconductor region defined between the first conductive region and the second conductive region on and a second insulated gate formed on a second channel forming region in the surface of the second semiconductor region defined between the first semiconductor region and the third conductive region.

대표청구항 ▼

A photoelectric cell comprising: a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region to form a pn junction together with the first semiconductor region; a first conductive region formed in th

A photoelectric cell comprising: a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region to form a pn junction together with the first semiconductor region; a first conductive region formed in the surface of the first semiconductor region separated from the second semiconductor region to form a first rectifier junction together with the first semiconductor region; a second conductive region formed in the surface of the first semiconductor region separated from the first conductive region to thereby form a second rectifier junction together with the first semiconductor region which is electrically connected to the second semiconductor region; a third conductive region formed in the surface of the second semiconductor region to form a third rectifier junction together with the second semiconductor region; a first insulated gate formed on a first channel forming region in the surface of the first semiconductor region between the first conductive region and the second conductive region; and a second insulated gate formed on a second channel forming region in the surface of said second semiconductor region defined between the first semiconductor region and the third conductive region.