초록 ▼

Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures usi

Multiple solid precursor bubblers are used to alleviate channeling effects caused by high carrying gas flow rates to provide for deposition of indium-based epitaxial materials in high-capacity MOCVD reactor systems. Precracking of precursor materials that exhibit higher dissociation temperatures using heated manifolds or heated susceptor, and rotation of individual wafers in a multi-wafer reactor chamber enhance thickness uniformity, surface morphology and electronic properties of deposited epitaxial layers.

대표청구항 ▼

A metal organic chemical vapor deposition reactor system for depositing epitaxial material layers on a plurality of wafers, said system consisting of: (a) a carrying gas source for providing carrying gas; (b) a plurality of mass flow controllers coupled to the carrying gas source; (c) a first bubble

A metal organic chemical vapor deposition reactor system for depositing epitaxial material layers on a plurality of wafers, said system consisting of: (a) a carrying gas source for providing carrying gas; (b) a plurality of mass flow controllers coupled to the carrying gas source; (c) a first bubbler for a first solid precursor, coupled to a first of the plurality of mass flow controllers wherein the first solid precursor provides a first reactant; (d) a second bubbler for a second solid precursor, coupled to a second of the plurality of mass flow controllers wherein the second solid precursor provides a second reactant; (e) a third bubbler for a third solid precursor, coupled to a third of the plurality of mass flow controllers wherein the third solid precursor provides a third reactant; (f) a first manifold having a first input coupled to the carrying gas source and second and third inputs coupled to outputs of the first and second bubblers respectively; (g) a second manifold having a first input coupled to the carrying gas source and a second input coupled to an output of the third bubbler; (h) a reactor chamber having a first input coupled to an output of the first manifold and a second input coupled to an output of the second manifold wherein a mixture of the first and second reactants enters the reactor chamber through the first input thereof and the third reactant enters the reactor chamber through the second input thereof; (i) a rotatable susceptor disposed within the reactor chamber for supporting said wafers and rotating said wafers about the axis of said susceptor; and (j) means for rotating each wafer of said plurality of wafers about the center of each said wafer.