초록 ▼

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat tr

In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

대표청구항 ▼

[ What is claimed is:] [1.] A method for producing a semiconductor device comprising the steps of:preparing a rectangular substrate having an insulating surface;forming a semiconductor film comprising amorphous silicon on said insulating surface;disposing a metal element in contact with said semicon

[ What is claimed is:] [1.] A method for producing a semiconductor device comprising the steps of:preparing a rectangular substrate having an insulating surface;forming a semiconductor film comprising amorphous silicon on said insulating surface;disposing a metal element in contact with said semiconductor film, said metal element being capable of promoting crystallization of the amorphous silicon; andirradiating the semiconductor film with a laser light to increase crystallinity of the semiconductor film, said laser light having a cross section elongated in one direction at a surface of said semiconductor film; andmoving said substrate relative to said laser light in a direction orthogonal to an elongation direction of said cross section during the irradiation of said laser light,wherein the elongation direction of said cross section at a surface of said semiconductor film is oblique with respect to the sides of said substrate.