초록 ▼

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure

A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

대표청구항 ▼

[ What is claimed is:] [1.] A method for cleaning a surface of a substrate, the substrate being formed of a silicon, silicon dioxide or gallium arsenide material and the substrate surface having thereon an undesired material to be removed from the surface of the substrate, the undesired material com

[ What is claimed is:] [1.] A method for cleaning a surface of a substrate, the substrate being formed of a silicon, silicon dioxide or gallium arsenide material and the substrate surface having thereon an undesired material to be removed from the surface of the substrate, the undesired material comprising a first silicon oxide material, the substrate surface also having thereon a second silicon oxide material which is different from the first silicon oxide material and which is desired to be retained on said substrate after performance of said method, the second silicon oxide material being selected from the group consisting of doped silicon oxide, deposited silicon oxide, and thermally grown silicon oxide, the method comprising the steps of:placing the substrate in a gaseous environment comprising at least one fluorine containing gas selected from the group consisting of fluorine and fluorine containing gases, other than F.sub.2 O, which are free of hydrogen and which can be photodissociated with light of a wavelength in the range of 180-600 nm, the gaseous environment being substantially free of plasma products, water, hydrogen, hydrogen fluoride and hydrogen containing organic compounds, andexposing the substrate to UV irradiation in the presence of the gaseous environment until the first silicon oxide material has been removed.