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Metallization of ceramic through application of an adherent reducible layer

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B32B-003/00
  • B32B-015/00
  • B32B-009/06
  • B22F-003/00
출원번호 US-0699515 (1996-08-29)
발명자 / 주소
  • Jin Sungho
  • Johnson
  • Jr. David Wilfred
  • Law Henry Hon
  • Thomson
  • Jr. John
  • Tiefel Thomas Henry
출원인 / 주소
  • Lucent Technologies Inc.
대리인 / 주소
    Books, Esq.
인용정보 피인용 횟수 : 17  인용 특허 : 10

초록

The present invention provides improved techniques for metallizing ceramic substrates. The method comprises providing a ceramic substrate and depositing a layer of reducible material on the ceramic substrate. The layer of reducible material includes a reducible ceramic such as copper oxide. The cera

대표청구항

[ What is claimed is:] [1.] An electrical device including a metallized portion comprising:a ceramic substrate; anda metallized layer disposed on the ceramic substrate, the metallized layer including metallic regions and ceramic regions, the ceramic regions having at least one constituent in common

이 특허에 인용된 특허 (10)

  1. Horiguchi Akihiro (Yokohama JPX) Kasori Mituo (Kawasaki JPX) Ueno Fumio (Kawasaki JPX) Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX) Endo Mitsuyoshi (Yamato JPX) Tanaka Shun-ichiro (Yok, Aluminum nitride sintered body having conductive metallized layer.
  2. Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX) Asai Hironori (Kawasaki MA JPX) Anzai Kazuo (Worcester MA) Hatano Tsuyoshi (Yokohama JPX), Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it.
  3. Sunahara Kazuo (Yokohama JPX) Ichimatsu Tsuneo (Yokohama JPX) Aoki Yumiko (Yokohama JPX), Conductive paste compositions and ceramic substrates.
  4. Nakatani Seiichi (Neyagawa JPX) Yuhaku Satoru (Osaka JPX) Okinaka Hideyuki (Toyonaka JPX) Ishida Toru (Hirakata JPX) Makino Osamu (Hirakata JPX) Kikuchi Tatsuro (Kyoto JPX), Conductor paste and method of manufacturing a multilayered ceramic body using the paste.
  5. Mitchell James D. (Chadds Ford PA), Copper conductor compositions containing copper oxide and Bi2O3-based glass.
  6. Grier ; Sr. ; John D., Copper thick film conductor.
  7. Fleming Debra A. (Lake Hiawatha NJ) Johnson ; Jr. David W. (Bedminster NJ) Rhodes Warren W. (Raritan NJ) Roy Apurba (Rockwall TX) Thomson ; Jr. John (Sprink Lake NJ), Method for making multilayer magnetic components.
  8. Rellick Joseph R. (Newark DE), Mixed oxide bonded copper conductor compositions.
  9. Dietz Raymond L. (Poway CA) Featherby Michael (San Diego CA) Margetts Peter K. (El Cajon CA), Silver-filled glass.
  10. Senda Atsuo (Ootsu JPX) Kasanami Tohru (Kyoto JPX) Nakagawa Takuji (Kyoto JPX), Structure of copper conductor and method of forming same.

이 특허를 인용한 특허 (17)

  1. Rajagopalan,Nagarajan; Shek,Meiyee; Lee,Albert; Lakshmanan,Annamalai; Xia,Li Qun; Cui,Zhenjiang, Adhesion improvement for low k dielectrics to conductive materials.
  2. Papaioannou, Athanassios; Beeckler, Christopher Thomas; Govari, Assaf, Catheter with irrigated tip electrode with porous substrate and high density surface micro-electrodes.
  3. deRochemont L. Pierre ; Farmer Peter H., Ceramic composite wiring structures for semiconductor devices and method of manufacture.
  4. de Rochemont L. Pierre ; Farmer Peter H., Ceramic composites with improved interfacial properties and methods to make such composites.
  5. Ito, Masahiko; Tanahashi, Masakazu; Kume, Toshiro; Morimoto, Kouichi; Kojima, Junji; Igaki, Emiko, Electrode for PTC thermistor and method for producing the same, and PTC thermistor.
  6. Ito, Masahiro; Tanahashi, Masakazu; Kume, Toshiro; Morimoto, Kouichi; Kojima, Junji; Igaki, Emiko, Electrode for PTC thermistor and method for producing the same, and PTC thermistor.
  7. Huang, Kegang; Huang, Judy H; Xu, Ping, Method and apparatus for treating low k dielectric layers to reduce diffusion.
  8. Wong, Boon; Silhavy, Robert E.; Shinno, Jennifer, Method of forming a soldered electrical connection.
  9. deRochemont,L. Pierre; Farmer,Peter H., Method of manufacture of ceramic composite wiring structures for semiconductor devices.
  10. Cohen,Barney M.; Ngan,Kenny King Tai; Li,Xiangbing, Plasma preclean with argon, helium, and hydrogen gases.
  11. Huang, Judy H.; Bencher, Christopher Dennis; Rathi, Sudha; Ngai, Christopher S.; Kim, Bok Hoen, Plasma treatment for copper oxide reduction.
  12. Rathi, Sudha; Xu, Ping; Huang, Judy, Plasma treatment for copper oxide reduction.
  13. Yang Lisa ; Tolia Anish ; Mosely Roderick Craig, Plasma treatment for ex-situ contact fill.
  14. Huang,Judy, Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers.
  15. Cohen, Barney M.; Hausmann, Gilbert; Parkhe, Vijay; Xu, Zheng, Reduction of metal oxide in a dual frequency etch chamber.
  16. Huang, Judy H.; Bencher, Christopher Dennis; Rathi, Sudha; Ngai, Christopher S.; Kim, Bok Hoen, Semiconductor device having reduced oxidation interface.
  17. Huang, Judy H.; Bencher, Christopher Dennis; Rathi, Sudha; Ngai, Christopher S.; Kim, Bok Hoen, Semiconductor device having silicon carbide and conductive pathway interface.

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