초록 ▼

An underlying interconnection is formed on a semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate and the underlying interconnection. A metal film is deposited on the interlayer insulating film, and is patterned in an interconnection pattern, and a firs

An underlying interconnection is formed on a semiconductor substrate, and an interlayer insulating film is formed on the semiconductor substrate and the underlying interconnection. A metal film is deposited on the interlayer insulating film, and is patterned in an interconnection pattern, and a first opening for connecting the metal film to the underlying interconnection is patterned, thereby forming an overlying interconnection. Then, a protection film is formed so as to cover the surfaces of the overlying interconnection and the interlayer insulating film. Next, a photoresist film is formed on the protection film, and is patterned to provide a second opening larger than the first opening in the protection film above the first opening and provide a third opening in a pad-portion forming region on the overlying interconnection. At the same time, with the overlying interconnection as a mask, the interlayer insulating film is selectively etched out to form a through hole. Then, a tungsten film is deposited in the through hole and on the protection film, and the unnecessary portion of the tungsten film is etched back to form a tungsten plug in the through hole which electrically connects the underlying interconnection to the overlying interconnection.

대표청구항 ▼

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device with a multilevel interconnection comprising:a first step of forming an underlying interconnection on a semiconductor substrate;a second step of forming an interlayer insulating film on said semiconductor substrate and said

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device with a multilevel interconnection comprising:a first step of forming an underlying interconnection on a semiconductor substrate;a second step of forming an interlayer insulating film on said semiconductor substrate and said underlying interconnection;a third step of depositing a metal film on said interlayer insulating film in an interconnection pattern, and patterning a first opening for connecting said metal film to said underlying interconnection, thereby forming an overlying interconnection;a fourth step of forming a protection film so as to cover surfaces of said overlying interconnection and said interlayer insulating film;a fifth step of forming a photoresist film on said protection film, and patterning said photoresist film to provide a second opening larger than said first opening in said protection film above said first opening and provide a third opening in a pad-portion forming region on said overlying interconnection;a sixth step of forming said second opening and said third opening in said protection film with said photoresist film used as a mask, and selectively etching out said interlayer insulating film with said overlying interconnection as a mask, thereby forming a through hole;a seventh step of removing said photoresist film; andan eighth step of depositing a tungsten film in a through hole and on said protection film, and etching back said tungsten film on said protection film, forming a tungsten plug in said through hole which electrically connects said underlying interconnection to said overlying interconnection.