초록 ▼

A power semiconductor device (e.g. MOSFET or IGBT) has a temperature sensing means in the form of thin-film sensing element (D1) on a first insulating layer (2) on the device body (10). The sensing element is preferably a reverse-biased p-n junction thin-film polycrystalline silicon diode (D1). In o

A power semiconductor device (e.g. MOSFET or IGBT) has a temperature sensing means in the form of thin-film sensing element (D1) on a first insulating layer (2) on the device body (10). The sensing element is preferably a reverse-biased p-n junction thin-film polycrystalline silicon diode (D1). In order to screen the sensitive element (D1) from electrical noise, an electrically conductive layer (4) is present on a second electrically insulating layer (5) over the thin-film element (D1) and forms part of an electrical screen (3,4) which is present over and under the thin-film element (D1). This electrical screen (3,4) also comprises a semiconductive region (3) underlying the thin-film element (D1), with the overlying conductive layer (4) electrically connected to the semiconductive region (3) at a window (6) in the insulating layers (2,5). One electrical connection of the thin-film element (D1) may be formed by the screening conductive layer (4) extending through a contact window (46) in the second insulating layer (5) and connected to a stable reference potential (e.g. ground). The electrical screen (3,4) can be integrated around the thin-film element (D1) in the same process steps as are already used for power device fabrication, but with modified mask layouts for providing the desired geometry in accordance with the invention. The overlying screening conductive layer (4) may be a main electrode (e.g. source) of the power semiconductor device.

대표청구항 ▼

[ I claim:] [1.] A power semiconductor device comprising a semiconductor body in which heat is generated during operation of the power semiconductor device, a first electrically insulating layer adjacent to one major surface of the body, which first insulating layer is present on an underlying semic

[ I claim:] [1.] A power semiconductor device comprising a semiconductor body in which heat is generated during operation of the power semiconductor device, a first electrically insulating layer adjacent to one major surface of the body, which first insulating layer is present on an underlying semiconductive region of the body, and a temperature sensing means for the body comprising a thin-film sensing element which is present on the first insulating layer on the semiconductive region, characterised in that an electrically conductive layer is present on a second electrically insulating layer over the thin-film sensing element, and in that an electrical screen is present over and under the thin-film sensing element, the electrical screen being formed by the electrically conductive layer overlying the thin-film sensing element and by the semiconductive region underlying the thin-film sensing element, and by the electrically conductive layer being electrically connected to the semiconductive region.