초록 ▼

An integrated circuit (10) is formed using jet vapor deposition (JVD) silicon nitride. A non-volatile memory device (11) has a tunnel dielectric layer (27) and an inter-poly dielectric layer (31) that can be formed from JVD silicon nitride. A transistor (12,13,40) is formed that has a gate dielectri

An integrated circuit (10) is formed using jet vapor deposition (JVD) silicon nitride. A non-volatile memory device (11) has a tunnel dielectric layer (27) and an inter-poly dielectric layer (31) that can be formed from JVD silicon nitride. A transistor (12,13,40) is formed that has a gate dielectric material made from JVD silicon nitride. In addition, a passivation layer (47) can be formed overlying a semiconductor device (40) that is formed from JVD silicon nitride.

대표청구항 ▼

[ We claim:] [1.] A method of forming a semiconductor device comprising the steps of:depositing a first silicon nitride film on a semiconductor material using a silicon gas source and a nitrogen gas source, wherein the nitrogen gas source does not contain hydrogen, and wherein at least one of the si

[ We claim:] [1.] A method of forming a semiconductor device comprising the steps of:depositing a first silicon nitride film on a semiconductor material using a silicon gas source and a nitrogen gas source, wherein the nitrogen gas source does not contain hydrogen, and wherein at least one of the silicon and nitrogen gas sources flows at a supersonic velocity;forming a first gate electrode over the first silicon nitride film;forming current carrying electrodes adjacent to the first gate electrode;depositing a second silicon nitride film on the first gate electrode using the silicon gas source and the nitrogen gas source, wherein the nitrogen gas source does not contain hydrogen, and wherein at least one of the silicon and nitrogen gas sources flows at a supersonic velocity during this step; andforming a second gate electrode over the second silicon nitride film and the first gate electrode.