$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F16L-003/00
  • F16L-055/00
  • F17D-001/02
  • C23C-016/00
출원번호 US-0612731 (1996-03-08)
발명자 / 주소
  • Barr Thomas Aloysius
  • Barr Christopher Velton
  • Elliott James Charles
  • Frew Dirk Alan
출원인 / 주소
  • Control Systems, Inc.
인용정보 피인용 횟수 : 106  인용 특허 : 0

초록

A mounting system, for supporting semiconductor process gas delivery and control components for assembly and use as a gas stick, aligns the connection union seals between fittings on adjacent components to absorb accumulated stresses resulting from manufacturing tolerances and reduce the likelihood

대표청구항

[ What is claimed is:] [1.] A mount system to align and support gas stick semiconductor process gas delivery and regulation components along a common axis, said mount comprising:an elongate support member having a first end, a second end, an intermediate section therebetween, and a longitudinal axis

이 특허를 인용한 특허 (106)

  1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.
  2. Sergi, Paul D., Antenna insulator.
  3. Marquardt, David; Shugrue, John, Apparatus and method for calculating a wafer position in a processing chamber under process conditions.
  4. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  5. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.
  6. Grable, Jonathan L.; Orr, William M., Backflow preventer.
  7. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  8. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.
  9. Halpin, Michael; Shero, Eric; White, Carl; Alokozai, Fred; Winkler, Jerry; Dunn, Todd, Chamber sealing member.
  10. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.
  11. Ohmi Tadahiro,JPX ; Yamaji Michio,JPX ; Shinohara Tsutomu,JPX ; Itoi Shigeru,JPX ; Hirao Keiji,JPX ; Kawano Yuji,JPX ; Tanaka Shigeaki,JPX ; Yokoyama Kosuke,JPX ; Morokoshi Hiroshi,JPX ; Ikeda Nobuka, Couplings for fluid controllers.
  12. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  13. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  14. Yednak, III, Andrew M.; Dunn, Todd; White, Carl; Manasco, Michael, Deposition valve assembly and method of heating the same.
  15. Maurice, Kevin L., Device for clamping a shaft.
  16. Noll,Brad L.; Kock,Frank; Behnke,Clark; Valdivia,Salvador, Double check valve assembly.
  17. Noll, Brad L.; Orr, William M.; Kock, Frank, Dual chamber adapter.
  18. Vu, Kim Ngoc, Extreme flow rate and/or high temperature fluid delivery substrates.
  19. Vu, Kim Ngoc, Fluid delivery substrates for building removable standard fluid delivery sticks.
  20. Lei Lawrence ; Trihn Son ; Huston Joel M., Fluid delivery system and method.
  21. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  22. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
  23. Young, Jr., Robert Raymond, Gas isolation box.
  24. Young, Jr., Robert Raymond, Gas isolation box.
  25. Yednak, III, Andrew M.; Pettinger, Jr., Frederick L., Heater jacket for a fluid line.
  26. Maher Joseph, Integrated gas delivery system.
  27. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.
  28. DiPrizio, Anthony C.; Abbott, Nathan; Vroman, Christopher; Patel, Rajnikant B.; McNamara, Eric, Low-profile surface mount filter.
  29. DiPrizio, Anthony; Abbott, Nathan; Vroman, Christopher; Patel, Rajnikant B.; McNamara, Eric, Low-profile surface mount filter.
  30. DiPrizio, Anthony; Abbott, Nathan; Vroman, Christopher; Patel, Rajnikant B.; McNamara, Eric, Low-profile surface mount filter.
  31. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  32. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  33. Pore, Viljami, Method and apparatus for filling a gap.
  34. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  35. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  36. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.
  37. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  38. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  39. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  40. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  41. Kang, DongSeok, Method for depositing thin film.
  42. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  43. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  44. Winkler, Jereld Lee, Method for forming conformal carbon films, structures conformal carbon film, and system of forming same.
  45. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  46. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  47. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  48. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  49. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  50. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  51. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  52. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  53. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  54. Haukka, Suvi; Shero, Eric James; Alokozai, Fred; Li, Dong; Winkler, Jereld Lee; Chen, Xichong, Method for treatment of deposition reactor.
  55. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  56. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  57. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  58. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  59. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  60. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  61. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  62. Tolle, John, Methods of forming films including germanium tin and structures and devices including the films.
  63. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.
  64. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
  65. Morgan, Daniel P.; Nesbitt, Clay, Modular valve manifold system.
  66. Winkler, Jereld Lee; Shero, Eric James; Alokozai, Fred, Multi-step method and apparatus for etching compounds containing a metal.
  67. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  68. Milligan, Robert Brennan; Alokozai, Fred, Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same.
  69. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.
  70. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E.; White, Carl L., Precursor delivery system.
  71. Fondurulia, Kyle; Shero, Eric; Verghese, Mohith E; White, Carl L, Precursor delivery system.
  72. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  73. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  74. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  75. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  76. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  77. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  78. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  79. Shero, Eric; Halpin, Michael; Winkler, Jerry, Radiation shielding for a substrate holder.
  80. Zhu, Chiyu, Selective film deposition method to form air gaps.
  81. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  82. Raisanen, Petri; Givens, Michael; Verghese, Mohith, Semiconductor device dielectric interface layer.
  83. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
  84. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  85. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  86. Xie, Qi; Machkaoutsan, Vladimir; Maes, Jan Willem, Semiconductor structure and device and methods of forming same using selective epitaxial process.
  87. Duret Michael J. ; Hasenkamp Erin Martin ; Markulec Jeffrey R. ; Rex Dennis G. ; Schuster Richard E., Sieve like structure for fluid flow through structural arrangement.
  88. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  89. Morgan, Daniel P., Slide lock gas delivery system.
  90. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  91. Seaman George H. ; Thornberg Gary R., Standardized gas isolation box (GIB) installation.
  92. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
  93. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  94. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  95. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.
  96. Dunn, Todd; Alokozai, Fred; Winkler, Jerry; Halpin, Michael, Susceptor heater and method of heating a substrate.
  97. Dunn, Todd; White, Carl; Halpin, Michael; Shero, Eric; Winkler, Jerry, Susceptor heater shim.
  98. Chen, Ting-Pang, Suspending device.
  99. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
  100. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  101. Sarin, Michael Christopher; Mendez, Rafael; Bartlett, Gregory M.; Hill, Eric; Lawson, Keith R.; Rosser, Andy, Systems and methods for mass flow controller verification.
  102. Shero, Eric J.; Raisanen, Petri I.; Jung, Sung-Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species.
  103. Shero, Eric; Raisanen, Petri I.; Jung, Sung Hoon; Wang, Chang-Gong, Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species.
  104. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
  105. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  106. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로