초록

The bonding pad structure is so arranged that an area of the first wiring layer area is smaller than that of the second wiring layer or the first wiring layer is formed outside a bonding region of the second wiring layer under the second wiring layer.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device having a bonding pad portion of a multilayered wiring structure comprising at least first and second wiring layers and at least one interlayer insulating layer between the wiring layers which has a plurality of via holes filled with an electrically

[ What is claimed is:] [1.] A semiconductor device having a bonding pad portion of a multilayered wiring structure comprising at least first and second wiring layers and at least one interlayer insulating layer between the wiring layers which has a plurality of via holes filled with an electrically conductive component so as to electrically connect the wiring layers, characterized in that(1) the first wiring layer has a wiring pattern including a plurality of spaced apart portions,(2) the interlayer insulation layer is located on the first wiring layer and fills the slit portions of the wiring pattern, and the via hole contained in the interlayer insulation is located on the first wiring layer, and(3) the second wiring layer is formed on the interlayer insulation layer so that it is electrically connected with the first wiring layer through the plurality of via holes, and functions as a pad electrode for electrical input or output with the outside of the semiconductor device, wherein each spaced apart portion of the first wiring layer is connected to the second wiring layer through a via hole.