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By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon

By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a resonance tunneling transistor.

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[ What is claimed is:] [1.] A quantization functional device, comprising:a silicon thin plate having a plurality of side walls each having a surface orientation of (111), a distance between the plurality of side walls being sufficiently thin so as to allow the silicon thin plate to act as a quantum

[ What is claimed is:] [1.] A quantization functional device, comprising:a silicon thin plate having a plurality of side walls each having a surface orientation of (111), a distance between the plurality of side walls being sufficiently thin so as to allow the silicon thin plate to act as a quantum well;a pair of tunneling barriers respectively provided on surfaces of the side walls of the silicon thin plate;a first electrode and a second electrode sandwiching the pair of tunneling barriers; and a third electrode provided in the vicinity of the silicon thin plate and configured for applying a voltage to the silicon thin plate.