초록 ▼

The present invention relates to a pad for connecting external connection terminals such as bonding wires to IC chip. The present invention provides a semiconductor device having upper and lower electrode layers and an interlayer insulation film therebetween, the interlayer insulation film including

The present invention relates to a pad for connecting external connection terminals such as bonding wires to IC chip. The present invention provides a semiconductor device having upper and lower electrode layers and an interlayer insulation film therebetween, the interlayer insulation film including a through hole which is formed therethrough at a given location. An interlayer connection conductor is embedded in the through hole. For example, the ball-like portion of the bonding wire may be connected to the upper electrode layer such that the ball-like portion perfectly covers the embedded conductor. Such an arrangement will not create any step. Therefore, the bonding area can be easily ensured to facilitate a further formation of more layers. The embedded metal will not be adversely affected by moisture moved into along the bonding wire. The external connection terminal may be of any suitable form such as bump electrode and film carrier. The present invention may be broadly applied as a connection technique for these terminals. It is particularly important to secure a desired bonding area and to provide any measure against larger pressing and separating forces if the connection is made using the bonding wire. In view of improvement of the reliability, the present invention is effective. The through holes may be replaced by grooves into each of which an interlayer connection conductor is embedded. If the plane configuration in the grooves is modified, moisture can be more effectively prevented from entering the semiconductor device through the outer periphery of the IC chip.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device having a multi-layered wiring structure comprising:a first conductor layer connected to an external connection terminal;a second conductor layer;an electrical insulation layer interposed between said first and second conductor layers; anda third con

[ What is claimed is:] [1.] A semiconductor device having a multi-layered wiring structure comprising:a first conductor layer connected to an external connection terminal;a second conductor layer;an electrical insulation layer interposed between said first and second conductor layers; anda third conductor layer embedded in a through hole selectively formed through said electrical insulation layer, said third conductor layer electrically connecting said first conductor layer to said second conductor layer;wherein said third conductor layer is filled in said through hole, the height of the top and bottom of said third conductor layer being substantially equal to the height of the top and bottom of said electrical insulation layer and said third conductor layer is harder than said first and second conductor layers.