초록 ▼

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film, or introducing such a catalyst element into the amorphous silicon film by ion implantation and subsequently crystallizing the same by applying heat annealing at an appropriate temperature.

대표청구항 ▼

[ What is claimed is:] [1.] A p-channel type thin film transistor comprising:source and drain semiconductor regions having a p-type conductivity, said source and drain semiconductor regions doped with a p-type impurity and formed in a crystalline semiconductor film comprising silicon; anda channel s

[ What is claimed is:] [1.] A p-channel type thin film transistor comprising:source and drain semiconductor regions having a p-type conductivity, said source and drain semiconductor regions doped with a p-type impurity and formed in a crystalline semiconductor film comprising silicon; anda channel semiconductor region formed in said crystalline semiconductor film and extending between said source and drain regions,wherein at least said source and drain semiconductor regions of the semiconductor film contain a catalyst metal which is capable of promoting crystallization of said semiconductor film and said source and drain regions of the crystalline semiconductor film are selectively doped with phosphorus.