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Method of producing large diameter silicon carbide crystals

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-023/00
출원번호 US-0579277 (1995-12-27)
발명자 / 주소
  • Barrett Donovan L.
  • Thomas Richard N.
  • Seidensticker
  • deceased Raymond G.
  • Hopkins Richard H.
출원인 / 주소
  • Northrop Grumman Corporation
대리인 / 주소
    Sutcliff
인용정보 피인용 횟수 : 24  인용 특허 : 7

초록

A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation place

대표청구항

[ It is claimed:] [1.] A method for producing crystals of silicon carbide in a furnace, wherein the furnace has a crucible with a cavity therein, means for heating the crucible cavity, and first and second spaced-apart regions of the crucible cavity, the method comprising the steps of:providing a so

이 특허에 인용된 특허 (7)

  1. Plus Dora (South Bound Brook NJ) Ipri Alfred C. (Hopewell Township ; Mercer County NJ), Edgeless CMOS device.
  2. Rideout Vincent L. (Mohegan Lake NY), MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes.
  3. Stein Ren (Rttenbach DEX), Method for manufacturing single-crystal silicon carbide.
  4. Spence Wendell (San Jose CA), Non-volatile random access memory cell.
  5. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
  6. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
  7. Asai Shuji (Tokyo JPX), Substrate with a compound semiconductor surface layer and method for preparing the same.

이 특허를 인용한 특허 (24)

  1. Snyder, David W.; Everson, William J., Axial gradient transport apparatus and process.
  2. Rengarajan, Varatharajan; Brouhard, Bryan K.; Nolan, Michael C.; Zwieback, Ilya, Axial gradient transport growth process and apparatus utilizing resistive heating.
  3. Zwieback, Ilya; Gupta, Avinash K.; Semenas, Edward; Anderson, Thomas E., Guided diameter SiC sublimation growth with multi-layer growth guide.
  4. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K., Halosilane assisted PVT growth of SiC.
  5. Snyder, David W.; Everson, William J., Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals.
  6. Kordina, Olle Claes Erik; Paisley, Michael James, Method and apparatus for growing silicon carbide crystals.
  7. Zwieback, Ilya; Rengarajan, Varatharajan; Brouhard, Bryan K.; Nolan, Michael C.; Anderson, Thomas E., Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material.
  8. Powell,J. Anthony; Neudeck,Philip G.; Trunek,Andrew J.; Spry,David J., Method for the growth of large low-defect single crystals.
  9. Kuhn, Harald; Stein, Rene; Voelkl, Johannes, Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure.
  10. Gupta, Avinash K.; Semenas, Edward; Zwieback, Ilya; Barrett, Donovan L.; Souzis, Andrew E., Method of and system for forming SiC crystals having spatially uniform doping impurities.
  11. Gupta, Avinash K.; Zwieback, Ilya; Chen, Jihong; Getkin, Marcus; Stepko, Walter R. M.; Semenas, Edward, Method of annealing a sublimation grown crystal.
  12. Hiromu Shiomi JP; Shigehiro Nishino JP, Method of making SiC single crystal and apparatus for making SiC single crystal.
  13. Shiomi Hiromu,JPX ; Nishino Shigehiro,JPX, Method of making SiC single crystal and apparatus for making SiC single crystal.
  14. Wang, Shaoping; Kopec, Aneta; Ware, Rodd Mitchell; Holmes, Sonia, Method of silicon carbide monocrystalline boule growth.
  15. Mueller, Stephan, Methods of fabricating silicon carbide crystals.
  16. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
  17. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
  18. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
  19. Mueller,Stephan; Powell,Adrian; Tsvetkov,Valeri F., Seed and seedholder combinations for high quality growth of large silicon carbide single crystals.
  20. Masaki, Katsuaki; Kuba, Yutaka; Domoto, Chiaki; Ueyama, Daisuke; Hayashi, Yuichiro, Seed crystal holder for growing a crystal by a solution method.
  21. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K., Silicon carbide single crystals with low boron content.
  22. Zwieback, Ilya; Gupta, Avinash K., Silicon carbide with low nitrogen content and method for preparation.
  23. Gupta, Avinash K.; Semenas, Edward; Zwieback, Ilya; Barrett, Donovan L.; Souzis, Andrew E., System for forming SiC crystals having spatially uniform doping impurities.
  24. Zwieback, Ilya; Anderson, Thomas E.; Gupta, Avinash K.; Nolan, Michael C.; Brouhard, Bryan K.; Ruland, Gary E., Vanadium doped SiC single crystals and method thereof.
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