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Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0688256 (1996-07-29)
발명자 / 주소
  • Tsai Charles Su-Chang
인용정보 피인용 횟수 : 76  인용 특허 : 13

초록 ▼

A chemical vapor deposition process for depositing at least one layer of material onto a plurality of substrates is disclosed, which comprises providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates, wherein sa

대표청구항 ▼

[ I claim:] [1.] A chemical vapor deposition method for depositing at least one layer of material onto a plurality of substrates, comprising the steps of:providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates,

이 특허에 인용된 특허 (13)

  1. Matsuyama Toshiro (Tenri JPX) Kojima Yoshimi (Nara JPX) Ehara Shaw (Nara JPX), Apparatus and method for manufacturing photosensitive amorphous silicon objects.
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  2. Ertl ; Wilhelm ; Guckel ; Helmut ; Ruchardt ; Hugo ; Schneckenaichner ; Fritz, Apparatus for heat treating semiconductor wafers.
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  3. Monkowski Joseph R. (Carlsbad CA) Logan Mark A. (Carlsbad CA), Chemical vapor deposition method.
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  4. Ikeda Masakiyo (Yokohama JPX) Kojima Seiji (Tokyo JPX) Kikuchi Hiroshi (Tokyo JPX) Kashiwayanagi Yuzo (Yokosuka JPX), Chemical vapor deposition method for the thin film of semiconductor.
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  5. Monkowski Joseph R. (Carlsbad CA) Logan Mark A. (Carlsbad CA), Chemical vapor deposition reactor and method of use thereof.
    상세보기
  6. Tsai Charles S. (2653 S. Daytona Ave. Hacienda Hts. CA), Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface.
    상세보기
  7. Frijlink Peter M. (Crosne FRX), Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface.
    상세보기
  8. Frijlink Peter M. (Crosne FRX), Epitaxial growth reactor provided with a planetary support.
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  9. Kennedy Adam M. (Goleta CA), Metal organic chemical vapor deposition (MOCVD) reactor with recirculation suppressing flow guide.
    상세보기
  10. Suntola Tuomo (Riihikallio 02610 Espoo 61 SF) Antson Jorma (Urheilutie 22 ; 01350 Vantaa 35 SF), Method for producing compound thin films.
    상세보기
  11. Yanase Tomoo (Tokyo JPX) Mito Ikuo (Tokyo JPX), Method of growing InGaAsP on InP substrate with corrugation.
    상세보기
  12. Lee Hsing-Chung (Woodland Hills CA), Method of improving layer uniformity in a CVD reactor.
    상세보기
  13. Anderson Roger N. (San Jose CA) Lindstrom Paul R. (Aptos CA) Johnson Wayne (Phoenix AZ), Variable rate distribution gas flow reaction chamber.
    상세보기

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  4. Gangakhedkar, Kaushal; Yudovsky, Joseph, Apparatus and methods for wafer rotation in carousel susceptor.
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  5. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
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  7. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
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  8. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques.
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  13. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.
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  18. Law, Kam; Shang, Quanyuan; Harshbarger, William Reid; Maydan, Dan, Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications.
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  22. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.
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  36. Yudovsky, Joseph, Gas distribution system for cyclical layer deposition.
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  37. Pandelisev, Kiril A., Hot substrate deposition of fused silica.
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