초록 ▼

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-ty

New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.

대표청구항 ▼

[ What is claimed is:] [1.] A thermoelectric devices comprising:a first material comprising a skutterudite-type crystal lattice structure having thirty-two atomic crystallographic sites including eight metal atom sites and twenty-four non-metal atom sites, the first material further comprising a fir

[ What is claimed is:] [1.] A thermoelectric devices comprising:a first material comprising a skutterudite-type crystal lattice structure having thirty-two atomic crystallographic sites including eight metal atom sites and twenty-four non-metal atom sites, the first material further comprising a first amount of a first type of dopant; anda second material electrically connected to the first material and comprising a second amount of a second type of dopant.