초록 ▼

The specification describes a discriminating photodiode for detection of 1.55 .mu.m signals used in wavelength multiplexed systems operating with 1.3 .mu.m and 1.55 .mu.m wavelengths. The device uses a semiconductor layered structure to absorb photons from the 1.3 .mu.m signal, and annihilate the ph

The specification describes a discriminating photodiode for detection of 1.55 .mu.m signals used in wavelength multiplexed systems operating with 1.3 .mu.m and 1.55 .mu.m wavelengths. The device uses a semiconductor layered structure to absorb photons from the 1.3 .mu.m signal, and annihilate the photogenerated carriers, while passing the 1.55 .mu.m light to a photodetecting junction beneath the layered structure.

대표청구항 ▼

[ I claim:] [1.] A discriminating photodiode comprising:a semiconductor substrate,a photodiode overlying the substrate and integrated therewith,said photodiode being responsive to light at a wavelength of 1.55 .mu.m, the invention characterized by a multilayer absorbing structure overlying said phot

[ I claim:] [1.] A discriminating photodiode comprising:a semiconductor substrate,a photodiode overlying the substrate and integrated therewith,said photodiode being responsive to light at a wavelength of 1.55 .mu.m, the invention characterized by a multilayer absorbing structure overlying said photodiode and integrated therewith, said multilayer absorbing structure comprising multiple absorbing layers of semiconductor material having a bandgap wavelength greater than 1.3 .mu.m, with each layer separated by a barrier layer of semiconductor material having a bandgap greater than 1.3 eV.