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Semiconductor light emitting device and manufacturing method therefor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01S-003/19
  • H01L-033/00
출원번호 US-0528308 (1995-09-14)
우선권정보 JP-0235014 (1994-09-29)
발명자 / 주소
  • Shakuda Yukio,JPX
출원인 / 주소
  • Rohm Co., Ltd., JPX
대리인 / 주소
    Nikaido Marmelstein Murray & Oram LLP
인용정보 피인용 횟수 : 55  인용 특허 : 0

초록 ▼

A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap en

대표청구항 ▼

[ What is claimed is:] [2.] A semiconductor light emitting device of double hetero junction comprising:a first clad layer of an n-type;an active layer formed on said first clad layer: anda second clad layer of a p-type formed on said active layer, said first and second clad layers sandwiching said a

이 특허를 인용한 특허 (55)

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