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Laser processing method of semiconductor device using a catalyst 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/268
출원번호 US-0562274 (1995-11-22)
우선권정보 JP-0319224 (1994-11-29)
발명자 / 주소
  • Tanaka Koichiro,JPX
  • Yamaguchi Naoaki,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & FergusonFerguson
인용정보 피인용 횟수 : 213  인용 특허 : 0

초록

It is intended to provide a technique of separately forming thin-film transistors disposed in a peripheral circuit area and those disposed in a pixel area in accordance with characteristics required therefor in a manufacturing process of semiconductor devices to constitute a liquid crystal display d

대표청구항

[ What is claimed is:] [1.] A laser processing method of a semiconductor device having an amorphous silicon film formed on a substrate that is to finally constitute a liquid crystal display device, said method comprising:the first step of depositing a silicon oxide film on the amorphous silicon film

이 특허를 인용한 특허 (213)

  1. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Active matrix display device with TFTs of different refractive index.
  2. Im, James S., Advanced excimer laser annealing for thin films.
  3. Shunpei Yamazaki JP; Satoshi Teramoto JP; Naoto Kusumoto JP; Koichiro Tanaka JP, Apparatus and method for laser radiation.
  4. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Apparatus and method for laser radiation.
  5. Yamazaki, Shunpei; Teramoto, Satoshi; Kusumoto, Naoto; Tanaka, Koichiro, Apparatus and method for laser radiation.
  6. Yamazaki,Shunpei; Teramoto,Satoshi; Kusumoto,Naoto; Tanaka,Koichiro, Apparatus and method for laser radiation.
  7. Yamazaki,Shunpei; Teramoto,Satoshi; Kusumoto,Naoto; Tanaka,Koichiro, Apparatus and method for laser radiation.
  8. Arai Kunio,JPX, Apparatus for laser processing with a mechanical cutter.
  9. Tanaka,Koichiro, Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor.
  10. Im, James S.; Chung, Ui-Jin, Collections of laterally crystallized semiconductor islands for use in thin film transistors.
  11. Im, James S.; Chung, Ui-Jin, Collections of laterally crystallized semiconductor islands for use in thin film transistors.
  12. Hartzell,John W., Digital light valve semiconductor processing.
  13. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
  14. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  15. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  16. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.
  17. Im, James S., Enhancing the width of polycrystalline grains with mask.
  18. Im, James S., Enhancing the width of polycrystalline grains with mask.
  19. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  20. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  21. Im, James S., Flash lamp annealing crystallization for large area thin films.
  22. Yamazaki, Shunpei; Tanaka, Koichiro; Miyairi, Hidekazu; Shiga, Aiko; Shimomura, Akihisa; Akiba, Mai, Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment.
  23. Im,James S., Laser crystallization and selective patterning using multiple beamlets.
  24. Tanaka, Koichiro, Laser irradiation apparatus.
  25. Tanaka, Koichiro, Laser irradiation apparatus.
  26. Shunpei Yamazaki JP; Koichiro Tanaka JP; Naoto Kusumoto JP, Laser irradiation apparatus and laser irradiation method.
  27. Yamazaki, Shunpei; Tanaka, Koichiro; Kusumoto, Naoto, Laser irradiation apparatus and laser irradiation method.
  28. Tanaka, Koichiro; Yamamoto, Yoshiaki, Laser irradiation method and laser irradiation apparatus.
  29. Tanaka, Koichiro; Yamamoto, Yoshiaki, Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device.
  30. Yamazaki, Shunpei; Tanaka, Koichiro, Laser irradiation method, laser irradiation apparatus, and semiconductor device.
  31. Yamazaki, Shunpei; Tanaka, Koichiro, Laser irradiation method, laser irradiation apparatus, and semiconductor device.
  32. Yamazaki, Shunpei; Tanaka, Koichiro, Laser irradiation method, laser irradiation apparatus, and semiconductor device.
  33. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiation method, laser irradiation apparatus, and semiconductor device.
  34. Yamazaki,Shunpei; Tanaka,Koichiro, Laser irradiation method, laser irradiation apparatus, and semiconductor device.
  35. Tanaka,Koichiro; Isobe,Atsuo; Moriwaka,Tomoaki, Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system.
  36. Ishihara Hiroaki,JPX ; Nakashita Kazuhisa,JPX ; Ohnuma Hideto,JPX ; Tanaka Nobuhiro,JPX ; Adachi Hiroki,JPX, Laser processing apparatus and laser processing process.
  37. Ishihara, Hiroaki; Nakashita, Kazuhisa; Ohnuma, Hideto; Tanaka, Nobuhiro; Adachi, Hiroki, Laser processing apparatus and laser processing process.
  38. Ohnuma, Hideto; Tanaka, Nobuhiro; Adachi, Hiroki, Laser processing apparatus and laser processing process.
  39. Ohnuma,Hideto; Tanaka,Nobuhiro; Adachi,Hiroki, Laser processing apparatus and laser processing process.
  40. Zhang Hongyong,JPX ; Tanaka Koichiro,JPX, Laser processing method.
  41. Zhang, Hongyong; Tanaka, Koichiro, Laser processing method.
  42. Zhang,Hongyong; Tanaka,Koichiro, Laser processing method.
  43. David J. McCulloch GB, Laser system.
  44. Im, James S., Laser-irradiated thin films having variable thickness.
  45. Im,James, Laser-irradiated thin films having variable thickness.
  46. Im, James S.; Van Der Wilt, Paul C., Line scan sequential lateral solidification of thin films.
  47. Im, James S.; Van Der Wilt, Paul C., Line scan sequential lateral solidification of thin films.
  48. Im, James S., Method and apparatus for processing thin metal layers.
  49. Im,James S., Method and apparatus for processing thin metal layers.
  50. Yamazaki, Shunpei; Tanaka, Koichiro, Method and apparatus for producing semiconductor device.
  51. Im, James S., Method and system for facilitating bi-directional growth.
  52. Im,James S.; Choi,Jae Beom, Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization.
  53. Joo Seungki,KRX ; Kim Taekyung,KRX, Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor.
  54. Joo, Seungki; Kim, Taekyung, Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor.
  55. Yeh, Wen-Chang, Method for fabricating a polycrystalline silicon film.
  56. Makita Naoki,JPX ; Miyamoto Tadayoshi,JPX ; Shibuya Tsukasa,JPX, Method for fabricating a semiconductor device.
  57. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
  58. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  59. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  60. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
  61. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device.
  62. Hisashi Ohtani JP; Hiroki Adachi JP; Akiharu Miyanaga JP; Toru Takayama JP, Method for manufacturing a semiconductor device.
  63. Ohtani,Hisashi; Adachi,Hiroki; Miyanaga,Akiharu; Takayama,Toru, Method for manufacturing a semiconductor device.
  64. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
  65. Shimomura,Akihisa; Ohnuma,Hideto; Shoji,Hironobu, Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device.
  66. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method for manufacturing a thin film transistor device.
  67. Shimomura,Akihisa; Koyama,Masaki; Shoji,Hironobu, Method for manufacturing semiconductor device, and laser irradiation apparatus.
  68. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
  69. Im, James S., Method for processing laser-irradiated thin films having variable thickness.
  70. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.
  71. Kusumoto Naoto,JPX ; Yamazaki Shunpei,JPX, Method for producing insulated gate thin film semiconductor device.
  72. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.
  73. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.
  74. Kusumoto, Naoto; Yamazaki, Shunpei, Method for producing insulated gate thin film semiconductor device.
  75. Kusumoto,Naoto; Yamazaki,Shunpei, Method for producing insulated gate thin film semiconductor device.
  76. Im, James S., Method for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in edge regions, and a mask for facilitating such artifact reduction/elimination.
  77. Shunpei Yamazaki JP, Method of crystallizing a semiconductor layer in a MIS transistor.
  78. Lee Kyung-Eon,KRX ; Choi Jae-Beom,KRX, Method of crystallizing a silicon film and a method of manufacturing a liquid crystal display apparatus.
  79. Yamazaki, Shunpei, Method of fabricating a MIS transistor.
  80. Yamazaki,Shunpei, Method of fabricating a MIS transistor.
  81. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.
  82. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
  83. Ohtani, Hisashi; Mitsuki, Toru, Method of fabricating semiconductor devices.
  84. Ohtani Hisashi,JPX ; Mitsuki Toru,JPX, Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel.
  85. Ohtani, Hisashi, Method of forming crystalline silicon film.
  86. Minegishi Masahiro,JPX ; Ino Masumitsu,JPX ; Kunii Masafumi,JPX ; Urazono Takenobu,JPX ; Hayashi Hisao,JPX, Method of forming polycrystalline semiconductor thin film.
  87. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  88. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  89. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  90. Tanaka, Koichiro; Moriwaka, Tomoaki, Method of laser irradiation, laser irradiation apparatus, and method of manufacturing a semiconductor device.
  91. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.
  92. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.
  93. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.
  94. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
  95. Mitsuki, Toru; Shichi, Takeshi; Maekawa, Shinji; Shibata, Hiroshi; Miyanaga, Akiharu, Method of manufacturing a semiconductor device having a crystallized semiconductor film.
  96. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
  97. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
  98. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
  99. Mishima, Yasuyoshi; Suga, Katsuyuki; Takei, Michiko; Hara, Akito, Method of manufacturing semiconductor device with polysilicon film.
  100. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Method of producing a semiconductor device with overlapped scanned linear lasers.
  101. Mitsuhashi Hiroshi,JPX ; Kawakyu Yoshito,JPX, Method of producing polycrystalline silicon.
  102. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification.
  103. Im,James S.; Sposili,Robert S.; Crowder,Mark A., Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification.
  104. Im,James S.; Sposili,Robert S.; Crowder,Mark A., Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification.
  105. Im, James S., Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films.
  106. Im,James; Van Der Wilt,Paul Christiaan, Polycrystalline TFT uniformity through microstructure mis-alignment.
  107. Wada, Hiroyuki; Hirata, Yoshimi; Taguchi, Ayumu; Tatsuki, Koichi; Umezu, Nobuhiko; Kubota, Shigeo; Abe, Tetsuo; Ooshima, Akifumi; Hattori, Tadashi; Takatoku, Makoto; Sugano, Yukiyasu, Polysilicon evaluating method, polysilicon inspection apparatus and method for preparation of thin film transistor.
  108. Im, James S., Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate.
  109. Im, James S., Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and a structure of such film regions.
  110. Im, James S., Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions.
  111. Im,James S., Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity, and a structure of such film regions.
  112. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
  113. Hongyong Zhang JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Process for laser processing and apparatus for use in the same.
  114. Zhang, Hongyong; Yamazaki, Shunpei; Takemura, Yasuhiko, Process for laser processing and apparatus for use in the same.
  115. Zhang,Hongyong; Yamazaki,Shunpei; Takemura,Yasuhiko, Process for laser processing and apparatus for use in the same.
  116. Im, James S.; van der Wilt, Paul Christiaan, Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions.
  117. Im, James S.; van der Wilt, Paul Christiaan, Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions.
  118. Moffatt, Stephen; Ranish, Joseph M., Pulse train annealing method and apparatus.
  119. Moffatt, Stephen; Ranish, Joseph M., Pulse train annealing method and apparatus.
  120. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  121. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
  122. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
  123. Kato, Kiyoshi; Ozaki, Tadafumi; Mutaguchi, Kohei, Semiconductor device.
  124. Kato,Kiyoshi; Ozaki,Tadafumi; Mutaguchi,Kohei, Semiconductor device.
  125. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
  126. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  127. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  128. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  129. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  130. Tanaka, Koichiro; Isobe, Atsuo; Yamamoto, Yoshiaki, Semiconductor device and its manufacturing method.
  131. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  132. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  133. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  134. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  135. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  136. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  137. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  138. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  139. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
  140. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  141. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  142. Shoji,Hironobu; Shimomura,Akihisa; Koyama,Masaki, Semiconductor device and method for manufacturing semiconductor device.
  143. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  144. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  145. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  146. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  147. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  148. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  149. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  150. Yamazaki, Shunpei; Kusumoto, Naoto; Tanaka, Koichiro, Semiconductor device and method for producing the same.
  151. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  152. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  153. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  154. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  155. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  156. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  157. Noguchi, Takashi; Kanaya, Yasuhiro; Kunii, Masafumi; Ikeda, Yuji; Usui, Setsuo, Semiconductor device formed of single crystal grains in a grid pattern.
  158. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  159. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  160. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  161. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  162. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  163. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Tanaka Koichiro,JPX, Semiconductor device having channel refractive index in first and second directions.
  164. Yamazaki, Shunpei; Adachi, Hiroki; Kuwabara, Hideaki, Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same.
  165. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  166. Yamazaki, Shunpei; Tanaka, Koichiro, Semiconductor device, and method of forming the same.
  167. Yamazaki, Shunpei; Tanaka, Koichiro, Semiconductor device, and method of forming the same.
  168. Yamazaki, Shunpei; Tanaka, Koichiro, Semiconductor device, and method of forming the same.
  169. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  170. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  171. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  172. Takeda,Kazuo; Sato,Takeshi; Saito,Masakazu; Gotoh,Jun, Semiconductor thin film decomposing method, decomposed semiconductor thin film, decomposed semiconductor thin film evaluation method, thin film transistor made of decomposed semiconductor thin film, .
  173. Taketomi, Yoshinao; Kuramasu, Keizaburo; Izuchi, Masumi; Satani, Hiroshi; Tsutsu, Hiroshi; Nishitani, Hikaru; Nishitani, Mikihiko; Goto, Masashi; Mino, Yoshiko, Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same.
  174. Taketomi, Yoshinao; Kuramasu, Keizaburo; Izuchi, Masumi; Satani, Hiroshi; Tsutsu, Hiroshi; Nishitani, Hikaru; Nishitani, Mikihiko; Goto, Masashi; MIno, Yoshiko, Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same.
  175. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  176. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  177. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
  178. Noguchi Takashi,JPX ; Kanaya Yasuhiro,JPX ; Kunii Masafumi,JPX ; Ikeda Yuji,JPX ; Usui Setsuo,JPX, Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof.
  179. Im, James S.; Van Der Wilt, Paul C., Single scan irradiation for crystallization of thin films.
  180. Im,James S.; van der Wilt,Paul Christiaan, Single scan irradiation for crystallization of thin films.
  181. Im, James S., Single-shot semiconductor processing system and method having various irradiation patterns.
  182. Im, James S., Single-shot semiconductor processing system and method having various irradiation patterns.
  183. Im, James S., Single-shot semiconductor processing system and method having various irradiation patterns.
  184. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method.
  185. Im,James S.; Sposili,Robert S.; Crowder,Mark A., Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method.
  186. Im,James S., System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques.
  187. Im, James S., System for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in overlap regions, and a mask for facilitating such artifact reduction/elimination.
  188. Im, James S.; van der Wilt, Paul C., Systems and methods for creating crystallographic-orientation controlled poly-silicon films.
  189. Im, James S.; van der Wilt, Paul Christian, Systems and methods for creating crystallographic-orientation controlled poly-silicon films.
  190. Im, James S., Systems and methods for inducing crystallization of thin films using multiple optical paths.
  191. Im,James, Systems and methods for inducing crystallization of thin films using multiple optical paths.
  192. Im, James S.; Deng, Yikang; Hu, Qiongying; Chung, Ui-Jin; Limanov, Alexander B., Systems and methods for non-periodic pulse partial melt film processing.
  193. Im, James S.; Chung, Ui-Jin; Limanov, Alexander B.; Van Der Wilt, Paul C., Systems and methods for non-periodic pulse sequential lateral soldification.
  194. Im, James S.; Chung, Ui-Jin; Limanov, Alexander B.; Van Der Wilt, Paul C., Systems and methods for non-periodic pulse sequential lateral solidification.
  195. Im, James S., Systems and methods for preparation of epitaxially textured thick films.
  196. Im, James S., Systems and methods for preparation of epitaxially textured thick films.
  197. Im, James S., Systems and methods for preparing epitaxially textured polycrystalline films.
  198. Im, James S., Systems and methods for preparing epitaxially textured polycrystalline films.
  199. Im, James S., Systems and methods for processing a film, and thin films.
  200. Im,James, Systems and methods for processing thin films.
  201. Im, James S., Systems and methods for the crystallization of thin films.
  202. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures.
  203. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  204. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  205. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  206. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  207. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  208. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  209. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  210. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  211. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon.
  212. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon.
  213. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon.
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