$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process for forming metal interconnect structures for use with integrated circuit devices to form integrated circuit st 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/283
출원번호 US-0516614 (1995-08-18)
발명자 / 주소
  • Rostoker Michael D.
  • Kapoor Ashok K.
출원인 / 주소
  • LSI Logic Corporation
대리인 / 주소
    Taylor
인용정보 피인용 횟수 : 64  인용 특허 : 0

초록

A process for forming an integrated circuit structure is described wherein individual integrated circuit devices such as MOS or bipolar transistors are constructed on and in a semiconductor substrate and one or more layers of metal interconnects are constructed on and in a second substrate, preferab

대표청구항

[ Having thus described the invention what is claimed is:] [1.] A process for forming an integrated circuit structure comprising a plurality of individual integrated circuit devices constructed on and in a first semiconductor substrate and at least one layer of metal interconnects constructed on and

이 특허를 인용한 특허 (64)

  1. Vora, Madhukar B., Apparatus and methods for high-density chip connectivity.
  2. Yang, Ku-Feng; Wu, Weng-Jin; Chiou, Wen-Chih; Hu, Jung-Chih, Backside process for a substrate.
  3. Pozder,Scott K.; Michaelson,Lynne M.; Mathew,Varughese, Barrier for use in 3-D integration of circuits.
  4. Huang, Tse-Yao; Chen, Yi-Nan; Shih, Chiang-Lin, Conducting wire and contact opening forming method for reducing photoresist thickness and via resistance.
  5. Abbott, Todd R., DRAM including a vertical surround gate transistor.
  6. Abbott, Todd R., DRAM including a vertical surround gate transistor.
  7. Visokay, Mark Robert; Kim, Tae S.; Nandakumar, Mahalingam; Rullan, Eric D.; Shinn, Gregory B., Dummy contacts to mitigate plasma charging damage to gate dielectrics.
  8. Briere, Michael, Flip chip FET device.
  9. Briere,Michael, Flip chip FET device.
  10. Chiou, Wen-Chih; Yu, Chen-Hua; Wu, Weng-Jin, Formation of through via before contact processing.
  11. Yu, Chen-Hua; Chiou, Wen-Chih; Wu, Weng-Jin, Formation of through via before contact processing.
  12. Mastromatteo,Ubaldo, Integrated device including connections on a separate wafer.
  13. Vinciarelli,Patrizio; McCauley,Charles I.; Starenas,Paul V., Low loss, high density array interconnection.
  14. Wang, Chien-Hao; Lin, Kuo-Hsiang; Huang, Yao-Ting, Manufacturing process of a carrier.
  15. Forbes, Leonard, Memory array and memory device.
  16. Forbes, Leonard, Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines.
  17. Forbes, Leonard, Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines.
  18. Forbes, Leonard, Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines.
  19. Lin, Yu-Ming; Yau, Jeng-Bang, Metal-free integrated circuits comprising graphene and carbon nanotubes.
  20. Lin, Yu-Ming; Yau, Jeng-Bang, Metal-free integrated circuits comprising graphene and carbon nanotubes.
  21. Akram Salman ; Farnworth Warren M. ; Wood Alan G., Method for fabricating semiconductor components using focused laser beam.
  22. Farooq Mukta Shaji ; Giri Ajay P. ; Patel Rajesh Shankerial, Method for forming thin film capacitors.
  23. Nejad, Hasan; Figura, Thomas A.; Haller, Gordon A.; Iyer, Ravi; Meldrim, John Mark; Harnish, Justin, Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuit.
  24. Forbes, Leonard, Method of making a memory array with surrounding gate access transistors and capacitors with global staggered local bit lines.
  25. Haller, Gordon A.; Hwang, David K.; Tang, Sanh Dang; Roberts, Ceredig, Method of manufacturing a memory device.
  26. Kurita, Yoichiro; Soejima, Koji; Kawano, Masaya, Method of manufacturing electronic circuit device.
  27. Han, Jae Won, Method of manufacturing inductor.
  28. Chazan David J. ; Chen Ted T. ; Kaplan Todd S. ; Lykins James L. ; Skinner Michael P. ; Strandberg Jan I., Method of planarizing thin film layers deposited over a common circuit base.
  29. Avouris, Phaedon; Chen, Kuan-Neng; Lin, Yu-Ming, Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology.
  30. Vora, Madhukar B., Methods and apparatus for high-density chip connectivity.
  31. Gordon, Haller A.; Sanh, Tang D.; Steven, Cummings, Methods of fabricating a memory device.
  32. Haller, Gordon; Tang, Sanh D.; Cummings, Steve, Methods of fabricating a memory device.
  33. Haller, Gordon; Tang, Sanh Dang; Cummings, Steve, Methods of fabricating a memory device.
  34. Morrow, Patrick; List, R. Scott; Kim, Sarah E., Methods of forming backside connections on a wafer stack.
  35. Morrow,Patrick; List,R. Scott; Kim,Sarah E., Methods of forming backside connections on a wafer stack.
  36. Hayasaka, Nobuo; Okumura, Katsuya; Sasaki, Keiichi; Matsuo, Mie, Multichip semiconductor device, chip therefor and method of formation thereof.
  37. Hayasaka, Nobuo; Okumura, Katsuya; Sasaki, Keiichi; Matsuo, Mie, Multichip semiconductor device, chip therefor and method of formation thereof.
  38. Hayasaka, Nobuo; Okumura, Katsuya; Sasaki, Keiichi; Matsuo, Mie, Multichip semiconductor device, chip therefor and method of formation thereof.
  39. Hayasaka,Nobuo; Okumura,Katsuya; Sasaki,Keiichi; Matsuo,Mie, Multichip semiconductor device, chip therefor and method of formation thereof.
  40. Figura, Thomas Arthur; Haller, Gordon A., Peripheral gate stacks and recessed array gates.
  41. Figura,Thomas A.; Haller,Gordon A., Peripheral gate stacks and recessed array gates.
  42. Mastromatteo, Ubaldo, Process for manufacturing integrated devices having connections on a separate wafer, and integrated device thus obtained.
  43. Ubaldo Mastromatteo IT; Fabrizio Ghironi IT; Roberto Aina IT; Mauro Bombonati IT, Process of manufacturing a composite structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material.
  44. Yu, Chen-Hua; Chiou, Wen-Chih; Wu, Weng-Jin, Protection for bonding pads and methods of formation.
  45. Smith, John W.; Haba, Belgacem, Semiconductor chip package with interconnect structure.
  46. Smith, John W.; Haba, Belgacem, Semiconductor chip package with interconnect structure.
  47. Salman Akram ; Warren M. Farnworth ; Alan G. Wood, Semiconductor components having lasered machined conductive vias.
  48. Okuyama, Atsushi, Semiconductor device and method for production of semiconductor device.
  49. Okuyama, Atsushi, Semiconductor device having a plurality of pads of low diffusible material formed in a substrate.
  50. Okuyama, Atsushi, Semiconductor device with a connection pad in a substrate and method for production thereof.
  51. Okuyama, Atsushi, Semiconductor device with pad with less diffusible contacting surface and method for production of the semiconductor device.
  52. Haller, Gordon; Tang, Sanh Dang; Cummings, Steve, Semiconductor memory device.
  53. Nejad, Hasan; Figura, Thomas A.; Haller, Gordon A.; Iyer, Ravi; Meldrim, John Mark; Harnish, Justin, Silicided recessed silicon.
  54. Nejad, Hasan; Figura, Thomas A.; Haller, Gordon A.; Iyer, Ravi; Meldrim, John Mark; Harnish, Justin, Silicided recessed silicon.
  55. Mastromatteo, Ubaldo; Ghironi, Fabrizio; Aina, Roberto; Bombonati, Mauro, Structure for electrically connecting a first body of semiconductor material overlaid by a second body of semiconductor material composite structure using electric connection structure.
  56. Forbes, Leonard, Surround gate access transistors with grown ultra-thin bodies.
  57. Forbes, Leonard, Surround gate access transistors with grown ultra-thin bodies.
  58. Forbes, Leonard, Surround gate access transistors with grown ultra-thin bodies.
  59. Forbes, Leonard, Surround gate access transistors with grown ultra-thin bodies.
  60. Chang, Hung-Pin; Wu, Weng-Jin; Chiou, Wen-Chih; Yu, Chen-Hua, System, structure, and method of manufacturing a semiconductor substrate stack.
  61. Chang, Hung-Pin; Wu, Weng-Jin; Chiou, Wen-Chih; Yu, Chen-Hua, System, structure, and method of manufacturing a semiconductor substrate stack.
  62. Seo, Won Cheol; Cho, Dae Sung, Wafer-level light emitting diode and wafer-level light emitting diode package.
  63. Seo, Won Cheol; Cho, Dae Sung, Wafer-level light emitting diode package and method of fabricating the same.
  64. Seo, Won Cheol; Cho, Dae Sung, Wafer-level light emitting diode package and method of fabricating the same.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로