초록 ▼

An "arrested nucleation" jet vapor deposition system uses sonic jets and moving substrates to produce nanocluster-embedded films in which semiconductor or metal nanoclusters are trapped in a film of hard, inorganic host materials. CdSe films fabricated at high rate and room temperature in accordance

An "arrested nucleation" jet vapor deposition system uses sonic jets and moving substrates to produce nanocluster-embedded films in which semiconductor or metal nanoclusters are trapped in a film of hard, inorganic host materials. CdSe films fabricated at high rate and room temperature in accordance with the present invention show unusual nonlinear optical behavior. Nanoclusters have unique size dependent properties and nanocluster based films have applications in optics and electronics.

대표청구항 ▼

[ I claim:] [1.] A method for vapor deposition of a film upon a substrate having a plurality of stable nanometer sized molecular dusters of a minority first material embedded within a majority host second material, said method comprising the steps of:providing a vacuum chamber having a plurality of

[ I claim:] [1.] A method for vapor deposition of a film upon a substrate having a plurality of stable nanometer sized molecular dusters of a minority first material embedded within a majority host second material, said method comprising the steps of:providing a vacuum chamber having a plurality of ports allowing for access to a vacuum chamber interior;positioning the substrate within said vacuum chamber interior at a first substrate position;depositing a nanocluster component of the film on said substrate by providing controlled entry of a first material gas into the interior of the vacuum chamber by means of a first gas jet apparatus affixed to a first vacuum chamber port, said first gas jet apparatus including:a first nozzle having an interior cavity for providing, from a first nozzle tip, a supersonic jet of gas directly towards a substrate first position for a time in excess of a time needed to allow molecules of said first material to combine on said surface into first molecule nanoclusters with each of said nanoclusters spaced from one another but in a time less than a time needed to deposit a continuous layer of said first material wherein adjacent ones of said nanoclusters have coalesced;a means for providing carrier gas within said first nozzle interior cavity; anda means for providing first material reactant gas within said first nozzle interior cavity;moving, relative to said gas jet apparatus, said substrate from said substrate first position to a substrate second position;depositing a host portion of the film on said substrate by providing controlled entry of a host reactant gas into the interior of the vacuum chamber by means of a host gas jet apparatus affixed to a second vacuum chamber port, said host gas jet apparatus including:a host nozzle having an interior cavity for providing, from a host nozzle tip, a supersonic jet of gas directly towards said substrate second position for at least a time needed to deposit a continuous layer of host material such that said host material substantially encompasses said nanoclusters,a means for providing carrier gas within said host nozzle interior cavity; anda means for providing host reactant gas within said host nozzle interior cavity; andevacuating gas from said vacuum chamber to maintain a pressure in said vacuum chamber.