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Plasma chamber for controlling ion dosage in ion implantation 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01J-027/20
출원번호 US-0756970 (1996-11-26)
발명자 / 주소
  • King Michael C.
  • Blake Julian G.
  • Rose Peter H.
출원인 / 주소
  • Eaton Corporation
대리인 / 주소
    Engellenner
인용정보 피인용 횟수 : 38  인용 특허 : 37

초록

An ion source for generating an ion beam of primary ions is disclosed that includes a plasma chamber and magnets positioned therein for separating the primary ions of the plasma from secondary ions within the plasma. An electrode assembly extracts the primary ions through an extractor outlet port of

대표청구항

[ Having described the invention, what is claimed as new and desired to be secured by Letters Patent is:] [1.] Apparatus for controlling the extraction of an ion beam from a plasma having a mixture of primary ions and secondary ions, said apparatus comprising:a chamber for enclosing said plasma, sai

이 특허에 인용된 특허 (37)

  1. Aitken Derek (East Molesey GB2), Apparatus and methods for ion implantation.
  2. Uehara, Akira; Hijikata, Isamu; Nakane, Hisashi; Nakayama, Muneo, Automatic plasma processing device and heat treatment device.
  3. Leung Ka-Ngo (Hercules CA), Broad beam ion implanter.
  4. Leung Ka-Ngo (Hercules CA) Kunkel Wulf B. (Berkeley CA) Williams Malcom D. (Danville CA) McKenna Charles M. (Boxford MA), Charge neutralization apparatus for ion implantation system.
  5. Kawata Yutaka (Kobe JPX) Inoue Ken-ichi (Kobe JPX) Ishibashi Kiyotaka (Kobe JPX) Kobayashi Akira (Kobe JPX) Inoue Koji (Tokyo JPX) Suzuki Norio (Kobe JPX) Arai Akio (Kobe JPX) Yamada Kaneo (Akashi JP, Converged ion beam apparatus.
  6. Shiraiwa Hirotsugu (Hino JPX), Conveyor apparatus.
  7. Freytsis Avrum (Swampscott MA) Hertel Richard J. (Boxford MA) Mears Eric L. (Rockport MA), Disk scanning apparatus for batch ion implanters.
  8. Farley Marvin (Ipswich MA), Dose control apparatus.
  9. Farley, Marvin, Dose control method.
  10. Brune Robert A. (Austin TX) Smith Dorsey T. (Austin TX) Ray Andrew M. (Austin TX), End station for a parallel beam ion implanter.
  11. Brubaker Stephen R. (Austin TX), Fluid flow control method and apparatus for an ion implanter.
  12. Grouillet Andre (Grenoble FRX), High-energy implantation process using an ion implanter of the low-or medium-current type and corresponding devices.
  13. Gault Roger B. (Austin TX) Keutzer Larry L. (Austin TX), Ion implantation control system.
  14. Robinson William P. (Newberry Park CA) Seliger Robert L. (Agoura CA), Ion implantation system.
  15. Robinson William P. (Newbury Park CA) Seliger Robert L. (Agoura CA), Ion implantation system.
  16. Turner Norman L. (Gloucester MA), Ion implantation with variable implant angle.
  17. Leung Ka-Ngo (Hercules CA) Ehlers Kenneth W. (Alamo CA), Ion source.
  18. Wittkower Andrew B. (Rockport MA) Ryding Geoffrey (Manchester MA), Isolation lock for workpieces.
  19. Sferlazzo Piero (Lynnfield MA) Rose Peter H. (North Conway NH) Trueira Frank R. (York ME), Microwave energized ion source for ion implantation.
  20. Koch George R. (Los Altos CA) Petersen ; III Carl T. (Fremont CA), Modular loadlock.
  21. Stark Lawrence R. (San Jose CA) Turner Frederick (Sunnyvale CA), Modular wafer transport and processing system.
  22. Leung Ka-Ngo (Hercules CA) Ehlers Kenneth W. (Alamo CA), Negative ion source.
  23. Yoshida Akihisa (Neyagawa JPX) Setsune Kentaro (Sakai JPX) Hirao Takashi (Moriguchi JPX), Plasma processing apparatus for large area ion irradiation.
  24. Usami Yasutsugu (Katsuta JPX), Process and apparatus for transferring an object and for processing semiconductor wafers.
  25. Davis Cecil J. (Greenville TX) Freeman Dean W. (Garland TX) Matthews Robert T. (Plano TX) Tomlin Joel T. (Garland TX) Jucha Rhett B. (Celeste TX), Processing apparatus and method.
  26. Rose Peter H. (N. Conway NH), Producing ion beams suitable for ion implantation and improved ion implantation apparatus and techniques.
  27. Leung Ka-Ngo (Hercules CA) Kunkel Wulf B. (Berkeley CA) Walther Steven R. (Salem MA), Production of N+ions from a multicusp ion beam apparatus.
  28. Leung Ka-Ngo (Hercules CA), Pulsed source ion implantation apparatus and method.
  29. Leung Ka-Ngo (Hercules CA), Selective ion source.
  30. Leung, Ka-Ngo; Ehlers, Kenneth W.; Hiskes, John R., Three chamber negative ion source.
  31. Ryding Geoffrey (Manchester MA), Treating workpieces with beams.
  32. Ryding Geoffrey (Manchester MA), Vacuum chamber for treating workpieces with beams.
  33. Purser, Kenneth H., Wafer holding apparatus for ion implantation.
  34. Ryding Geoffrey (Manchester MA), Wafer loading apparatus for beam treatment.
  35. Layman Frederick P. (Fremont CA) Huntley David A. (Mountain View CA) Dick Paul H. (San Jose CA) Coad George L. (Lafayette CA) Kuhlman Michael J. (Fremont CA) Vecta Roger M. (San Jose CA) Hobson Phill, Wafer processing system.
  36. Lee Steven N. (Irvine CA) Kim Jae Y. (Irvine CA), Wafer transfer apparatus.
  37. Hertel Richard J. (Bradford MA) Delforge Adrian C. (Rockport MA) Mears Eric L. (Rockport MA) MacIntosh Edward D. (Gloucester MA) Jennings Robert E. (Nethuen MA) Bhargava Akhil (Reading MA), Wafer transfer system.

이 특허를 인용한 특허 (38)

  1. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
  2. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
  3. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
  4. Yamazaki, Shunpei; Hamatani, Toshiji; Tanaka, Koichiro, Apparatus and method for doping.
  5. Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.
  6. Yamazaki,Shunpei; Hamatani,Toshiji; Tanaka,Koichiro, Apparatus and method for doping.
  7. Adibi, Babak; Murrer, Edward S., Application specific implant system and method for use in solar cell fabrications.
  8. Gierak, Jacques; Jede, Ralf, Device for generating an ion beam with magnetic filter.
  9. Glukhoy, Yuri, Electron-cyclotron resonance type ion beam source for ion implanter.
  10. Prabhakar, Vinay; Adibi, Babak, Grid for plasma ion implant.
  11. Prabhakar, Vinay; Adibi, Babak, Grid for plasma ion implant.
  12. Freer,Brian S., Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems.
  13. Murrell, Adrian John; Collart, Erik Jan Hilda; Harrison, Bernard Francis; Al-Bayati, Amir; Burgess, Chris James; Armour, David; Holmes, Andrew; Povall, Simon; Arnold, Drew; Burfield, Paul Anthony, Ion beam generation apparatus.
  14. Vanderberg, Bo H.; Ray, Andrew M.; Wenzel, Kevin W., Ion beam scanning systems and methods for improved ion implantation uniformity.
  15. Adibi, Babak; Chun, Moon, Ion implant system having grid assembly.
  16. Adibi, Babak; Chun, Moon, Ion implant system having grid assembly.
  17. Adibi, Babak; Chun, Moon, Ion implant system having grid assembly.
  18. Horsky, Thomas N.; Cohen, Brian C.; Krull, Wade A.; Sacco, Jr., George P., Ion implantation system and control method.
  19. Horsky, Thomas N.; Cohen, Brian C.; Krull, Wade A.; Sacco, Jr., George P., Ion implantation system and control method.
  20. Horsky,Thomas N.; Cohen,Brian C.; Krull,Wade A.; Sacco, Jr.,George P., Ion implantation system and control method.
  21. Horsky,Thomas N.; Cohen,Brian C.; Krull,Wade A.; Sacco, Jr.,George P., Ion implantation system and control method.
  22. Benveniste, Victor M.; DiVergilio, William F., Ion source and coaxial inductive coupler for ion implantation system.
  23. Benveniste, Victor M., Ion source providing ribbon beam with controllable density profile.
  24. Koichiro Tanaka JP, Laser processing apparatus and laser processing method.
  25. Brailove Adam A., Magnetic filter for ion source.
  26. Aoki Masahiko,JPX ; Tanjyo Masayasu,JPX, Method and apparatus for deflecting charged particles.
  27. Ye, John Zheng; Benveniste, Victor M.; Cristoforo, Michael Paul, Method and system for ion beam containment in an ion beam guide.
  28. Wenzel, Kevin W.; Vanderberg, Bo H., Method and system for ion beam containment using photoelectrons in an ion beam guide.
  29. Adibi, Babak; Chun, Moon, Method for ion implant using grid assembly.
  30. Yamazaki, Shunpei, Method for manufacturing SOI substrate and method for manufacturing semiconductor device.
  31. Brailove Adam A. ; Gwinn Matthew Charles, Multi-cusp ion source.
  32. Benveniste, Victor M., Multichannel ion gun.
  33. Adibi, Babak; Chun, Moon, Plasma grid implant system for use in solar cell fabrications.
  34. Kornfeld,G체nter; Schwertfeger,Werner; Lenz,Roland; Coustou,Gregory, Plasma-accelerator configuration.
  35. Adibi, Babak; Murrer, Edward S., Solar cell fabrication with faceting and ion implantation.
  36. Pederson, Terry; Hieslmair, Henry; Chun, Moon; Prabhakar, Vinay; Adibi, Babak; Bluck, Terry, Substrate processing system and method.
  37. Pederson, Terry; Hieslmair, Henry; Chun, Moon; Prabhakar, Vinay; Adibi, Babak; Bluck, Terry, Substrate processing system and method.
  38. Benveniste, Victor M., Symmetric beamline and methods for generating a mass-analyzed ribbon ion beam.
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