초록 ▼

An integrated circuit having a multi-layered metal wiring structure with interlayer insulating films therebetween. A small cutout is made in a metal wiring when it is desirous to have the metal wiring touch a contact formed in a through hole passing through said cutout. A larger cutout is made in a

An integrated circuit having a multi-layered metal wiring structure with interlayer insulating films therebetween. A small cutout is made in a metal wiring when it is desirous to have the metal wiring touch a contact formed in a through hole passing through said cutout. A larger cutout is made in a metal wiring when it is desirous to have the metal wiring remain spaced from a contact formed in a through hole passing through said cutout.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a semiconductor substrate having a surface covered by an insulating film;a lower-layer metal wiring formed on said insulating film;a first inter-layer insulating film covering said lower-layer metal wiring;an intermediate-metal wiring for

[ What is claimed is:] [1.] A semiconductor device comprising:a semiconductor substrate having a surface covered by an insulating film;a lower-layer metal wiring formed on said insulating film;a first inter-layer insulating film covering said lower-layer metal wiring;an intermediate-metal wiring formed on said first inter-layer insulating film;a second inter-layer insulating film covering said intermediate-layer metal wiring;an upper-layer metal wiring formed on said second inter-layer insulating film;a lower-layer cutout portion, having a wall surface, provided at a predetermined position in said lower-layer metal wiring, said lower-layer cutout portion being formed by severing said lower-layer metal wiring whereby said lower layer metal wiring is electrically separated by the lower-layer cutout portion;an intermediate-layer cutout portion, having a wall surface, provided in said intermediate-metal wiring at a position above said lower-layer cutout portion in, said intermediate-layer cutout portion being formed removing a portion of said intermediate-layer metal wiring to create a cutout portion in said intermediate-layer metal wiring, said intermediate-layer cutout portion being smaller than said lower-layer cutout portion;a through hole extending in a generally perpendicular direction with respect to said surface of said semiconductor substrate so as to penetrate said insulating film, said inter-layer insulating film, said intermediate-layer cutout portion and said second inter-layer insulating film, wherein no wall surface of said lower-layer cutout portion is exposed to said through hole, and wherein said intermediate-layer cutout portion has a wall surface exposed to said through hole; anda contact comprising a conductive material for filling said through hole, wherein said contact electrically contact (a) said semiconductor substrate and (b) the exposed wall surface of said intermediate-layer cutout portion.